Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

GuangCai Fu

Xiaoping Zhang

Tianlun Yang

Xianming Zhang

Zhichao Li

Haiyong Ni

A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.

Microphone and manufacture thereof

A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.

Semiconductor device and manufacture thereof

A method for forming a phase change random access memory is provided. The method includes providing a substrate having a surface; and forming a dielectric layer on the surface of the substrate. The method also includes forming a through-hole penetrating through the dielectric layer; and forming an adhesion layer on inner surface of the through-hole. Further, the method includes forming a metal layer doped with inorganic ions on the adhesion layer to reduce over-etching of the metal layer and increase heating efficiency of the metal layer on the surface of the adhesion layer; and forming a phase change layer on the dielectric layer, the adhesion layer and the doped metal layer.

Phase change random access memory and fabrication method thereof

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

Semiconductor device

A semiconductor device having a capacitive pressure sensor structure includes a substrate, an interlayer dielectric layer on the substrate, a bottom electrode of a pressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the bottom electrode, a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film, and a high thermal expansion coefficient material layer disposed on cover layer and sidewalls of the opening. Through the use of the high thermal expansion coefficient material layer, the capacitive pressure sensor structure is not susceptible to changes in ambient temperature to enhance the sensitivity of the capacitive pressure sensor structure.

MEMS pressure sensor with thermal compensation

A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer.

Growing community of inventors

Shanghai, China

GuangCai Fu