Rohm & Haas Electronic Materials LLC

Shipley Company LLC

International Business Machines Corporation

Gregory P Prokopowicz

Wu-Song S Huang

James F Cameron

Pushkara Rao Varanasi

Michael K Gallagher

Cong Liu

Cheng-Bai Xu

Chunyi Wu

Mingqi Li

John Paul Amara

Jin Wuk Sung

Gerhard Pohlers

Gerald B Wayton

Joseph F Lachowski

Kevin Y Wang

Emad Aqad

Jeffrey M Calvert

Irvinder Kaur

Wenjie Li

Timothy G Adams

Thomas Cardolaccia

Libor Vyklicky

Zidong Wang

Stewart A Robertson

Dana A Gronbeck

David A Valeri

Choong-Bong Lee

Jason A DeSisto

Tomas Marangoni

Gerhard Polhers

David A Valei

Irene Y Popova

A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.

Photoresist compositions and pattern formation methods

New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising amide component

In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Coating compositions suitable for use with an overcoated photoresist

Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.

Coating compositions

Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, include a hydrolyzed poly(alkoxysilane). These compositions are useful in methods of improving the adhesion of coating compositions to a substrate.

Adhesion promoter

New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.

Photoresist comprising nitrogen-containing compound

Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, include a hydrolyzed amino-alkoxysilane having a protected amino moiety. These compositions are useful in methods of improving the adhesion of coating compositions to a substrate, such as an electronic device substrate.

A photoacid generator has the formula (I): wherein R, R, R, L, L, LX, Z, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.

Photoacid generator, photoresist, coated substrate, and method of forming an electronic device

The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Compositions and processes for immersion lithography

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Worcester, MA, United States of America

Gregory P Prokopowicz