Cabot Microelectronics Corporation

Gregory H Bogush

Phillip W Carter

Brian L Mueller

David Schroeder

Jeffrey P Chamberlain

Paul M Feeney

Timothy P Johns

Robert Vacassy

Alicia Walters

Francesco M De Rege

Farhana Khan

The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.

Compositions and methods for dielectric CMP

The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Preequilibrium polishing method and system

The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Alkali metal-containing polishing system and method

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Aurora, IL, United States of America

Gregory H Bogush