Aixtron Se

Greg Siu

Brian Lu

Sasangan Ramanathan

Hugo Silva

Gi Youl Kim

Young Jin Jang

Woong Park

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or Ncontaining inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9&#xd7;10Torr or less, Si containing gas: 1&#xd7;10&#x2dc;3&#xd7;10Torr and N containing gas: 7&#xd7;10&#x2dc;6&#xd7;10Torr, and a pressure range of the gas is 500 mTorr&#x2dc;5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.

Growing community of inventors

Saratoga, CA, United States of America

Greg Siu