Freescale Semiconductor,inc.

Gor Amie Lai

Hei Ming Shiu

On Lok Chau

Lan Chu Tan

Heng Keong Yip

Thoon Khin Chang

A method for forming reinforced interconnects or bumps on a substrate includes first forming a support structure on the substrate. A substantially filled capsule is then formed around the support structure to form an interconnect. The interconnect can reach a height of up to 300 microns.

Method for forming reinforced interconnects on a substrate

A method for forming multi-layer bumps on a substrate includes depositing an adhesive or a flux on the substrate, depositing a first metal powder on the adhesive, and melting or reflowing the adhesive and first metal powder to form first bumps. An adhesive or a flux and a second metal powder are then deposited on the first bumps, and melted to form second bumps on the first bumps to form multi-layer bumps. The multi-layer bumps are formed without the need for any wet chemicals.

Method for forming multi-layer bumps on a substrate

A method for forming multi-layer bumps on a substrate includes depositing a first metal powder on the substrate, and selectively melting or reflowing a portion of the first metal powder to form first bumps. A second metal powder is then deposited on the first bumps, and melted to form second bumps on the first bumps. A masking plate is disposed over the substrate to select the portions of the metal powders that are melted and the metal powders are melted via an irradiation beam. The multi-layer bump is formed without the need for any wet chemicals.

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Hong Kong, China

Gor Amie Lai