Applied Materials, Inc.

Goichi Yoshidome

Keith A Miller

Adolph Miller Allen

Ilya Lavitsky

Kathleen Ann Scheible

Michael Allen Flanigan

Peijun Ding

Muhammad M Rasheed

Kadthala Ramaya Narendrnath

Fuhong Zhang

Umesh M Kelkar

Govinda Raj

Donny Young

Kishor Kumar Kalathiparambil

Ryan Hanson

Suhas Bangalore Umesh

Bopanna Ichettira Vasantha

Cristopher Mark Pavloff

Andrew Tomko

Xianmin Tang

Robert B Lowrance

Kirankumar Neelasandra Savandaiah

Martin Lee Riker

Brian T West

Ralf Hofmann

Michael A Miller

Hamid Tavassoli

Zhenbin Ge

Xiangjin Xie

Prashanth Kothnur

William R Johanson

Michael Rosenstein

Rong Tao

Wei Lei

Shirish A Pethe

Daniel Clarence Lubben

Anthony Chih-Tung Chan

Ilyoung R Hong

Mengqi Ye

Nelson A Yee

Sreekrishnan Sankaranarayan

Christopher Pavloff

Mehul Chauhan

Sushil Arun Samant

Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Methods for shaping magnetic fields during semiconductor processing

Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.

Etch uniformity improvement for single turn internal coil PVD chamber

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.

Apparatus for generating magnetic fields on substrates during semiconductor processing

A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.

Shield for a substrate processing chamber

A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

3D printed chamber components configured for lower film stress and lower operating temperature

Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.

Heated shield for physical vapor deposition chamber

Process shield for a substrate processing chamber

Deposition ring for a substrate processing chamber

Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

Collimator for use in a physical vapor deposition chamber

Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers

A holding assembly for retaining a deposition ring about a periphery of a substrate support in a substrate processing chamber, the deposition ring comprising a peripheral recessed pocket with a holding post. The holding assembly comprises a restraint beam capable of being attached to the substrate support, the restraint beam comprising two ends, and an anti-lift bracket. The anti-lift bracket comprises a block comprising a through-channel to receive an end of a restraint beam, and a retaining hoop attached to the block, the retaining hoop sized to slide over and encircle the holding post in the peripheral recessed pocket of the deposition ring.

Holding assembly for substrate processing chamber

A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member.

Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes

A process shield may include an elongated annular body having an outer surface and an inner surface; a lip extending radially outward from the outer surface of the body proximate a first end of the body such that a first portion of the body extends beyond the lip toward the first end; a plurality of openings in the lip; and a pin disposed in each of the plurality of openings to align the target assembly atop the process shield when the lid is placed atop the process shield, wherein the pin comprises an elongated body having a first surface with a beveled peripheral edge, wherein the first surface has a first diameter, a second surface opposing the first surface, wherein the second surface has a second diameter, and a sidewall, between the first surface and the second surface, wherein the sidewall has a concave portion having a third diameter.

Self-centering process shield

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Emeryville, CA, United States of America

Goichi Yoshidome