Wacker Chemie Ag

Goeran Klose

Heinz Kraus

Franz Salzeder

Tobias Weiss

Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Process for producing polycrystalline silicon

The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0&#xb0; to 45&#xb0; to the reactor wall, towards the base plate of the reactor.

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Hirten, Germany

Goeran Klose