Cheil Industries Inc.

Samsung Electronics Co., Ltd.

Cheil Industry, Inc.

Go-Un Kim

Hyun-Ji Song

Seung-Hee Hong

Sang-Kyun Kim

Jin-Hee Bae

Taek-Soo Kwak

Han-Song Lee

Eun-Su Park

Yoong-Hee Na

Kwen-Woo Han

Sang-Hak Lim

Byeong-Gyu Hwang

Bo-Sun Kim

Jin-Woo Seo

Young-Min Kim

Mi-young Kim

Yun-Jun Kim

Chung-Heon Lee

Yoo-Jeong Choi

Hui-Chan Yun

Yong-Woon Yoon

Hea-Jung Kim

You-Jung Park

Joon-Young Moon

Yu-Shin Park

Wan-Hee Lim

Bong-Hwan Kim

Seung-Wook Shin

Yo-Choul Park

Chang-ki Hong

Jeong-Nam Han

Dong-Min Kang

Hyo-San Lee

Youn-Jin Cho

Jung-Min Choi

Yong-Sik Yoo

Chung-Kyung Jung

Dong-jin Kim

Ahn-Ho Lee

Myung-Kook Park

Ho-Seok Yang

Jong-Dae Jeon

Dong-Hun Kang

Young-Chul Jung

Yu-Ri Jung

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12.

Cleaning composition after chemical mechanical polishing of organic film and cleaning method using the same

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.

Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device

Growing community of inventors

Uiwang-si, South Korea

Go-Un Kim