Tokyo Electron Limited

Lam Research Corporation

Glenn W Gale

Qian Fu

Joseph T Hillman

Naoki Shindo

Katrina Mikhaylichenko

Akitaka Shimizu

Mark Henry Wilcoxson

Genji Nakamura

Masato Kushibiki

Yoshihiro Hirota

Shenjian Liu

Yusuke Muraki

Bentley J Palmer

Yoshihiro Kato

Shigeo Ashigaki

Denis Syomin

Gunilla Jacobson

A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Method and apparatus for pattern collapse free wet processing of semiconductor devices

A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.

Processing apparatus

The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

Method for manufacturing semiconductor device

A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical COprocessing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical COprocessing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

System and method for processing a substrate using supercritical carbon dioxide processing

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Tokyo, Japan

Glenn W Gale