Micron Technology Incorporated

Lodestar Licensing Group LLC

Giuseppe D'Eliseo

Massimo Iaculo

Paolo Papa

Carminantonio Manganelli

Alberto Sassara

Giuseppe Ferrari

Luigi Esposito

Lalla Fatima Drissi

Xinghui Duan

Luca Porzio

Eric Kwok Fung Yuen

Xiangang Luo

Ting Luo

Yoav Weinberg

Salvatore Del Prete

Jianmin Huang

Danilo Caraccio

Stephen D Hanna

Antonino Pollio

Lucia Santojanni

Graziano Mirichigni

Umberto Siciliani

Guan Zhong Wang

Angelo Della Monica

Xiaolai Zhu

Anna Scalesse

Zhao Cui

Ashutosh Malshe

Emanuele Confalonieri

Walter Di Francesco

Tao Liu

Dionisio Minopoli

Francesco Falanga

Ornella Vitale

Anna Chiara Siviero

Ciro Feliciano

Allison Jayne Olson

Massimo Laculo

Huachen Li

Doriana Tardio

Methods, systems, and devices for data block refresh during read access are described. In some instances, when an access command (e.g., a read command) is received, a memory system may determine if the associated block is a PSA block. If the block is PSA block, its data may be provided to a host system to satisfy the read command and the block may either be refreshed or may be designated to be refreshed. For example, the block may be refreshed by copying its data to a write cache and writing the data from the cache to a new block. In other instances, an LBA of the block may be stored (e.g., designated) and the LBA may be refreshed when the memory system is idle.

Data block refresh during read access

Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Adaptive block mapping

Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Clustered parity for NAND data placement schema

Methods, systems, and devices for data relocation operation techniques are described. A memory system may include blocks of memory cells, for example, within a non-volatile memory device of the memory system. The memory system may identify a command to perform a data relocation operation associated with a block of memory cells and may select between a first procedure and a second procedure for performing the data relocation operation. The memory system may select between the first procedure and the second procedure based on whether one or more parameters associated with the data relocation operation satisfy a threshold. For example, the memory system may select the first procedure if the one or more parameters satisfy the threshold and may select the second procedure if the one or more parameters do not satisfy the threshold. The memory system may perform the data relocation operation using the selected procedure.

Data relocation operation techniques

NAND data placement schema

Methods, systems, and devices for integrating a pivot table in a logical-to-physical mapping of a memory system are described. The memory system may receive a read command and read a first entry of a first subset of mapping and a second entry of a second subset of mapping. The second entry may include at least a portion of a pivot table associated with physical addresses of a non-volatile memory device. The memory system may retrieve data from a physical address identified in the pivot table, rather than access a different portion of the logical-to-physical mapping. The memory system may transmit, to a host system, the data retrieved from the physical address identified in the pivot table.

Integrated pivot table in a logical-to-physical mapping

Methods, systems, and devices for setting switching for single-level cells (SLCs) are described. A memory system may receive an access command from a host. The access command may correspond to an SLC block or to a multiple-level cell block. If the access command corresponds to an SLC block, the memory system may modify the access command to include one or more bits indicating a setting to use for performing the access operation corresponding to the access command. The setting may define one or more operating parameters for performing the access operation. The memory system may use bits to indicate the setting that are used to indicate a page address for multiple-level cell blocks. The memory system may issue the access command to a memory device, which may perform the access operation using the setting indicated in the one or more bits included by the memory system.

Setting switching for single-level cells

Methods, systems, and devices for memory operations are described. A memory system may write data to sequential physical addresses of the memory system based on receiving multiple write commands, where the sequential physical addresses may be associated with sequential logical addresses. Based on writing the data, the memory system may receive a read command for data stored in the memory system, where the read command may include a logical address. The memory system may determine a physical address of the memory system where the data is stored based on the received logical address, a last logical address written at the memory system, and a sequence number group associated with the last logical address. Based on determining the physical address, the memory system may read the data stored at the physical address.

Direct logical-to-physical address mapping for sequential physical addresses

Devices and techniques for corrupted storage portion recovery in a memory device are described herein. A failure event can be detected during a garbage collection operation on a collection of storage portions (e.g., pages) in a memory array. Here, members of the collection of storage portions are being moved from a former physical location to a new physical location by the garbage collection operation. A reference to a former physical location of a possibly corrupt storage portion in the collection of storage portions can be retrieved in response to the failure event. Here, the possibly corrupt storage portion has already been written to a new physical location as part of the garbage collection operation. The possibly corrupt storage portion can then be rewritten at the new physical location using data from the former physical location.

Corrupted storage portion recovery in a memory device

Devices and techniques for NAND logical-to-physical table region tracking are described herein. A write request, including a logical page and data to be written at the logical page, is received at a controller of a NAND device. The NAND controller may then establish an entry in a logical-to-physical (L2P) mapping table between the logical page and a physical page of a physical block of the NAND device to which the data is written. Here, the entry may be in a region of the L2P mapping table that is one of multiple regions. An indication of the region may be written in a data structure corresponding to the physical block.

NAND logical-to-physical table region tracking

A memory device includes a memory array configured with a plurality of memory planes, and control logic, operatively coupled with the memory array. The control logic receives, from a requestor, a plurality of cache read commands requesting first data from the memory array spread across the plurality of memory planes and receives, from the requestor, a cache read context switch command and a snap read command requesting second data from one of the plurality of memory planes of the memory array. Responsive to receiving the cache read context switch command, the control logic suspends processing of the plurality of cache read commands and processes the snap read command to read the second data from the memory array and return the second data to the requestor.

Cache read context switching in a memory sub-system

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Caserta, Italy

Giuseppe D'Eliseo