Adesto Technologies Corporation

Mips Technologies, Inc.

Smsc Holdings Sarl

National Semiconductor Corporation

Synopsys, Inc.

Dialog Semiconductor Gmbh

Gideon Intrater

Bard Pedersen

Derric Lewis

Ryan C Kinter

Stephen Trinh

Shane Charles Hollmer

Ishai Naveh

John Dinh

Paul Hill

Nathan Gonzales

Scott Michael McCoy

Anders M Jagd

Qing Li

Karagada Ramarao Kishore

Michael Gottlieb Jensen

Andreas Hoffmann

Gunnar Braun

Soumya Banerjee

Achim Nohl

Maria Ukanwa

Ophir Shabtay

Biao Jia

Ohad Falik

Olaf Lüthje

Ludwig Rieder

Teck Huat Kerk

Xing Xu Jiang

Tzvia Weisman

Tim Short

Frank Fiedler

James Scott Johnson

A method can include: receiving, in a memory device, a read request from a host device that is coupled to the memory device by an interface; decoding an address of the read request that is received from the interface; decoding a command of the read request to determine whether the read request is for an aligned address operation; maintaining the decoded address without modification when the read request is determined as being for the aligned address operation regardless of an actual alignment of the decoded address; and executing the read request as the aligned address operation on the memory device by using the decoded address.

Latency reduction in SPI flash memory devices

A method of controlling a memory device can include: determining, by the memory device, a time duration in which the memory device is in a standby mode; automatically switching the memory device from the standby mode to a power down mode in response to the time duration exceeding a predetermined duration; exiting from the power down mode in response to signaling from a host device via an interface; and toggling a data strobe when data is ready to be output from the memory device in response to a read command from the host device.

Standby current reduction in memory devices

A method of controlling a read request can include: receiving, in a host device, the read request from a bus master, where the host device is coupled to a memory device by an interface; determining a configuration state of the read request; comparing an attribute of the read request against a predetermined attribute stored in the host device; adjusting the configuration state of the read request when the attribute of the read request matches the predetermined attribute; and sending the read request with the adjusted configuration state from the host device to the memory device via the interface.

Memory latency reduction in XIP mode

A method of controlling a memory device can include: receiving, by an interface, a write command from a host; beginning execution of a write operation on a first array plane of a memory array in response to the write command, where the memory array includes a plurality of memory cells arranged in a plurality of array planes; receiving, by the interface, a read command from the host; reconfiguring the write operation in response to detection of the read command during execution of the write operation; beginning execution of a read operation on a second array plane in response to the read command; and restoring the configuration of the write operation after the read operation has at least partially been executed.

Concurrent read and reconfigured write operations in a memory device

A memory device can include: a memory array with memory cells arranged as data lines; an interface that receives a read command requesting bytes of data in a consecutively addressed order from an address of a starting byte; a first buffer that stores a first data line from the memory array that includes the starting byte; a second buffer that stores a second data line from the memory array, which is consecutively addressed with respect to the first data line; output circuitry configured to access data from the buffers, and to sequentially output each byte from the starting byte through a highest addressed byte of the first data line, and each byte from a lowest addressed byte of the second data line until the requested data bytes has been output; and a data strobe driver that clocks each byte of data output by a data strobe on the interface.

Read latency reduction in a memory device

A memory device can include: a memory array arranged to store data lines; an interface that receives a first read command requesting bytes of data in a consecutively addressed order from a starting byte; a cache memory having a first buffer storing a first data line including the starting byte, and a second buffer storing a second data line, from the cache memory or the memory array; output circuitry that accesses data from the first buffer, and sequentially outputs each byte from the starting byte through a highest addressed byte of the first data line; and from the second buffer and sequentially outputs each byte from a lowest addressed byte of the second data line until the requested bytes of data have been output in order to execute the first read command, the contents of the first and second buffers being maintained in the cache memory.

Memory device having multiple read buffers for read latency reduction

A method of controlling a memory device can include: (i) receiving a first read command for a critical byte, where the critical byte resides in a first group of a memory array on the memory device; (ii) reading the critical byte from the memory array in response to the first read command, and providing the critical byte; (iii) reading a next byte in the first group; (iv) outputting the next byte from the first group when a clock pulse; (v) repeating the reading the next byte and the outputting the next byte for each byte in the first group; (vi) reading a first byte in a second group of the memory array, where the second group is sequential to the first group, and where each group is allocated to a cache line; and (vii) outputting the first byte from the second group when a clock pulse is received.

Support for improved throughput in a memory device

A method of controlling an ultra-deep power down (UDPD) mode in a memory device, can include: receiving a write command from a host via an interface; beginning a write operation on the memory device to execute the write command; reading an auto-UDPD (AUDPD) configuration bit from a status register; completing the write operation on the memory device; automatically entering the UDPD mode upon completion of the write operation in response to the AUDPD configuration bit being set; and entering a standby mode upon completion of the write operation in response to the AUDPD configuration bit being cleared.

Ultra-deep power down mode control in a memory device

In one embodiment, a cached memory device can include: (i) a memory array coupled to a system address bus and an internal data bus; (ii) a plurality of data buffers coupled to a system data bus, and to the memory array via the internal data bus; (iii) a plurality of valid bits, where each valid bit corresponds to one of the data buffers; (iv) a plurality of buffer address registers coupled to the system address bus, where each buffer address register corresponds to one of the data buffers; and (v) a plurality of compare circuits coupled to the system address bus, where each compare circuit corresponds to one of the data buffers.

Cached memory structure and operation

A memory device operable in an ultra-deep power-down mode can include: a command user interface; a voltage regulator having an output that provides a supply voltage for a plurality of components of the memory device, where the plurality of components comprises the command user interface; a wake-up circuit that remains powered on even when the memory device is in the ultra-deep power-down mode; the memory device being operable to enter the ultra-deep power-down mode in response to receiving a first predetermined command that causes the output of the voltage regulator to be disabled to completely power down the plurality of components during the ultra-deep power-down mode; and the memory device being operable to exit the ultra-deep power-down mode in response to receiving one of a hardware reset command sequence, a reset pin assertion, a power supply cycling, and a second predetermined command.

Memory device ultra-deep power-down mode exit control

A method of controlling an NVM device can include: (i) receiving, by an interface, a write command from a host; (ii) beginning execution of a write operation on a first array plane of a memory array in response to the write command, where the memory array includes a plurality of NVM cells arranged in a plurality of array planes; (iii) receiving, by the interface, a read command from the host; (iv) suspending the write operation in response to detection of the read command during execution of the write operation; (v) beginning execution of a read operation on a second array plane in response to the read command; and (vi) resuming the write operation after the read operation has at least partially been executed.

Concurrent read and write operations in a serial flash device

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Sunnyvale, CA, United States of America

Gideon Intrater