Samsung Electronics Co., Ltd.

Gi-Sik Hong

Dong-jun Lee

Sang-Kyun Kim

Kwang-bok Kim

Jung-sik Choi

Kyoung-Moon Kang

Nam-Soo Kim

Yun-Jeong Kim

Ye-hwan Kim

Choong-Ho Han

A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

CMP slurry composition for polishing an organic layer and method of forming a semiconductor device using the same

In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.

Slurry compositions and methods of polishing a layer using the slurry compositions

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Hwaseong-si, South Korea

Gi-Sik Hong