Advanced Micro Devices Corporation

Globalfoundries Inc.

Globolfoundries Inc.

Gerd Marxsen

Axel Preusse

Jens Heinrich

Markus Nopper

Markus Lenski

Robert Binder

Jan Raebiger

Joachim Metzger

Uwe Stoeckgen

Frank Mauersberger

Jens Kramer

Dirk Wollstein

Katja Steffen

Mike Schlicker

Uwe Gunter

In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

Semiconductor device formed by a replacement gate approach based on an early work function metal

By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

CMP system and method using individually controlled temperature zones

Superior contact elements may be formed in semiconductor devices in which sophisticated replacement gate approaches may be applied. To this end, a dielectric cap layer is provided prior to patterning the interlayer dielectric material so that any previously created cracks may be reliably sealed prior to the deposition of the contact material, while the removal of any excess portion thereof may be performed without an undue interaction with the electrode metal of the gate electrode structures. Consequently, a significantly reduced defect rate may be achieved.

Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer

In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

System and method for optical endpoint detection during CMP by using an across-substrate signal

In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material

By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Technique for electrochemically depositing an alloy having a chemical order

A polishing head for a chemical mechanical polishing apparatus is provided which includes at least two polishing head zones configured to provide different temperatures for transferring heat to at least two zones of a substrate corresponding to the at least two polishing head zones. The present disclosure addresses chemical mechanical polishing which allows a control of the polishing profile even if slurries are used, which show almost no dependency between polishing rate and down force.

Polishing head using zone control

A method and a controller for the chemical mechanical polishing (CMP) of substrates and, in particular, for the chemical mechanical polishing of metallization layers is disclosed. In a linear model of the CMP process, the erosion of the metallization layer to be treated is determined by the overpolish time and possibly by an extra polish time on a separate polishing platen for polishing the dielectric layer, wherein the CMP inherent characteristics are represented by sensitivity parameters derived empirically. Moreover, the control operation is designed so that even with a certain inaccuracy of the sensitivity parameters due to subtle process variations, a reasonable controller response is obtained.

Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step

In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to control a CMP system to compensate for a change in the conditions of consumables, thereby enhancing process stability.

Method and system for controlling the chemical mechanical polishing by using a sensor signal of a pad conditioner

In a new method of plating metal onto dielectric layers including small diameter vias and large diameter trenches, a surface roughness is created at least on non-patterned regions of the dielectric layer to enhance the uniformity of material removal in a subsequent chemical mechanical polishing (CMP) process.

Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process

In a method of in situ controlling the degree of fullness of wide lines in a damascene structure, an optical endpoint detection signal is analyzed so as to determine a time interval of substantially constant signal amplitude. The time interval is then used as a measure of the metal filled in a wide line in a damascene structure. By correlating the length of the time interval to at least one process parameter involved in the formation of the damascene structure, the degree of fullness of lines in the damascene structure may be controlled to maintain within a predefined allowable range.

Method and system for improving the manufacturing of metal damascene structures

In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

Apparatus and method for electrochemical metal deposition

The present invention is directed to a method and apparatus for performing polishing operations on substrates in an integrated circuit manufacturing environment. In one embodiment, the apparatus is comprised of a movable polishing platen, a polishing pad positioned on the platen, and a polishing arm that is adapted to receive and move the substrate relative to the polishing pad. The apparatus further comprises a first pad conditioner with a first conditioning surface that is positionable to allow contact between the first conditioning surface and the polishing pad, and a second pad conditioner with a second conditioning surface that is positionable to allow contact between the second conditioning surface and the polishing pad. In one embodiment, the method of the present invention comprises positioning a substrate to be polished in a polishing tool, supplying a polishing slurry to the tool, and providing relative movement between the substrate and a polishing pad. The method further comprises urging first and second pad conditioners into contact with the polishing pad, and providing a relative movement therebetween.

Apparatus and method for chemical mechanical polishing of a substrate

In a method of forming damascene metallization lines on a substrate by electroplating and chemical mechanical polishing, the metal layer thickness profile is shaped in correspondence to the removal rate during the chemical mechanical polishing. Thus, any non-uniformity of the chemical mechanical polishing process may be compensated for by appropriately depositing the metal layer so that erosion and dishing of the finally obtained metal lines are within tightly selected manufacturing tolerances.

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Radebeul, Germany

Gerd Marxsen