Infineon Technologies Ag

Infineon Technologies Austria Ag

Gerald Lackner

Carsten Von Koblinski

Walter Leitgeb

Francisco Javier Santos Rodriguez

Markus Ottowitz

Karin Schrettlinger

Michael Lecher

Martin Poelzl

Thomas Fischer

Thomas Feil

Paul Ganitzer

Jochen Mueller

Tobias Polster

Anton Mauder

Christian Maier

Josef Unterweger

Hans-Joachim Schulze

Roland Rupp

Oliver Haeberlen

Carsten Ahrens

Manfred Schneegans

Bernhard Goller

Jan Richter

Adolf Koller

Marko Swoboda

Ralf Rieske

Alexander Binter

Guenter Schagerl

Christoph Ahamer

Wolfgang Diewald

Heimo Graf

Franz-Josef Pichler

Johannes Mueller

A chuck for a laser beam wafer dicing equipment includes a wafer support plate having an upper surface for holding a wafer disposed on a dicing tape. The upper surface includes a topographically structured surface region that partly or completely overlaps an edge of the wafer when the wafer disposed on the dicing tape is placed on the upper surface. The topographically structured surface region provides for a reduction in an area of contact between the upper surface and the dicing tape.

Wafer chuck for a laser beam wafer dicing equipment

In an embodiment a method includes placing a wafer on a receptacle comprising a chuck base, wherein a light port for emitting light from a source of light is an opening located in a surface of the chuck base, and wherein the light port is located underneath the wafer, shining the light from the light port at an edge of the wafer so that light passes by the edge of the wafer and processing the wafer on the receptacle based on the light that passed by the edge of the wafer and that is received by a light sensitive element.

Method and apparatus for use in wafer processing

An electronic component includes a semiconductor device including a semiconductor die including a first surface, the first surface including a first metallization structure and edge regions surrounding the first metallization structure, a second surface opposing the first surface and including a second metallization structure, and side faces extending between the first surface and the second surface, wherein the edge regions of the first surface and portions of the side faces are covered by a first polymer layer, wherein the electronic component further includes a plurality of leads and a plastic housing composition, wherein the first metallization structure is coupled to a first lead and the second metallization structure is coupled to a second lead of the plurality of leads.

Composite wafer, semiconductor device and electronic component

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

In an embodiment an apparatus includes a receptacle configured to receive a wafer, a light port configured to emit light from a source of light so as to shine the light on an edge of the wafer, wherein the light port is an opening located on a surface of the receptacle and a light sensitive element configured to receive light that passed the edge of the wafer and to form a detection signal based on the received light, wherein the light port is located underneath the wafer.

In an embodiment, a composite semiconductor substrate includes a first polymer layer and a plurality of semiconductor dies having a first surface, a second surface opposing the first surface, side faces extending between the first surface and the second surface and a first metallization structure on the first surface. Edge regions of the first surface and at least portions of the side faces are embedded in the first polymer layer. At least one metallic region of the first metallization structure is exposed from the first polymer layer. A second metallization structure is arranged on the second surface of the plurality of semiconductor dies. A second polymer layer is arranged on edge regions of the second surface of the plurality of semiconductor dies and on the first polymer layer in regions between the side faces of neighbouring ones of the plurality of semiconductor dies.

A method and apparatus for use in a wafer processing are disclosed. In an embodiment a includes providing the wafer on a receptacle, wherein the receptacle comprises a light port, and wherein the light port includes a source of light, shining a light from the source of light at an edge of the wafer thereby passing light by the edge of the wafer and processing the wafer on the receptacle based on the light passing by the edge of the wafer and received by a light sensitive element.

A wafer arrangement in accordance with various embodiments may include: a wafer; and a wafer support ring, wherein the wafer and the wafer support ring are configured to be releasably coupled to one another so that the wafer support ring can be uncoupled from the wafer without causing damage to the wafer or the wafer support ring.

Wafer arrangement and method for processing a wafer

In an embodiment, a method includes forming at least one trench in non-device regions of a first surface of a semiconductor wafer, the non-device regions being arranged between component positions, the component positions including device regions and a first metallization structure, applying a first polymer layer to the first surface of a semiconductor wafer such that the trenches and edge regions of the component positions are covered with the first polymer layer and such that at least a portion of the first metallization structure is uncovered by the first polymer layer, removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, revealing portions of the first polymer layer in the non-device regions and producing a worked second surface and inserting a separation line through the first polymer layer in the non-device regions to form a plurality of separate semiconductor dies.

Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device

A method and an apparatus for use in processing a wafer are disclosed. In an embodiment the method includes providing a wafer on a receptacle, shining a light at an edge of the wafer and based on light that passed the edge of the wafer, processing the wafer on the receptacle.

A wafer arrangement in accordance with various embodiments may include: a wafer; and a wafer support ring, wherein the wafer and the wafer support ring are configured to be releasably attachable to one another.

In various embodiments, a semiconductor component may include a semiconductor layer having a front side and a back side; at least one electronic element formed at least partially in the semiconductor layer; at least one via formed in the semiconductor layer and leading from the front side to the back side of the semiconductor layer; a front side metallization layer disposed over the front side of the semiconductor layer and electrically connecting the at least one electronic element to the at least one via; a cap disposed over the front side of the semiconductor layer and mechanically coupled to the semiconductor layer, the cap being configured as a front side carrier of the semiconductor component; a back side metallization layer disposed over the back side of the semiconductor layer and electrically connected to the at least one via.

Semiconductor component with a front side and a back side metallization layer and manufacturing method thereof

Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1&#xd7;10W/cm.

Method for producing a semiconductor component

A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.

Method for manufacturing semiconductor devices having a glass substrate

Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area.

Growing community of inventors

Arnoldstein, Austria

Gerald Lackner