Micron Technology Incorporated

Gerald L Cadloni

Bruce A Liikanen

Larry Joseph Koudele

Michael Sheperek

John L Seabury

Francis Chew

Stephen P Van Aken

David L Miller

Violante Moschiano

Steve Kientz

Michael G Miller

Renato C Padilla

Gary F Besinga

Guy R Wagner

Chandra C Varanasi

Robert B Eisenhuth

Mark Ish

James P Crowley

Anita Marguerite Ekren

Stephen P VanAken

Bruce A Liikenanen

An apparatus includes circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

Memory sub-system with dynamic calibration using component-based function(s)

A method includes associating, by a processing device, a set of dies of a block family with a die family, wherein the block family is associated with a first threshold voltage offset bin for voltage offsets to be applied in a read operation; and responsive to detecting a triggering event, associating each die of the set of dies with a second threshold voltage offset bin for voltage offsets to be applied in a read operation, wherein the second threshold voltage offset bin is selected based on a representative die of the set of dies associated with the die family.

Threshold voltage offset bin selection based on die family in memory devices

Aspects of the present disclosure are directed to performing varying frequency memory sub-system background scans using either or both a timer and an I/O event limit. This can be accomplished by identifying a background scan trigger event from one of multiple possible types of background scan trigger events, such as a timer expiration or reaching an event count limit. In response to the background scan trigger event, a background scan can be initiated on a memory portion. The background scan can produce results, such as CDF-based data. When a metric based on the results exceeds a background scan limit, a refresh relocation can be performed and logged. A metric can be generated based on the CDF-based data, obtained error recovery depth data, or refresh relocation event data. When the metric is above or below corresponding background scan thresholds, a background scan frequency can be adjusted.

Dynamic background scan optimization in a memory sub-system

Several embodiments of systems incorporating memory components are disclosed herein. In one embodiment, a memory system can include a memory component and a processing device configured to access quality metrics corresponding to memory regions of the memory component. In some embodiments, the processing device can compare the quality metrics to one or more memory management thresholds. In some embodiments, when the quality metrics meet and/or exceed a first threshold, a refresh operation can be scheduled and/or performed on a corresponding memory region. In these and other embodiments, when the quality metrics meet and/or exceed a second threshold, the memory region is retired and removed from an active pool of memory regions.

Enhanced block management for a memory subsystem

Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.

Offset memory component automatic calibration (autocal) error recovery for a memory sub-system

A die read counter and a block read counter are maintained for a specified block of a memory device. An estimated number of read events associated with the specified block is determined based on a value of the block read counter and a value of the die read counter. Responsive to determining that the estimated number of read events satisfies a criterion, a media management operation of one or more pages associated with the specified block is performed.

Mitigating read disturb effects in memory devices

Several embodiments of systems incorporating memory sub-systems are disclosed herein. In one embodiment, a memory sub-system can include a memory component and a processing device configured to perform a background scan on a memory region of the memory component. In some embodiments, the background scan includes generating a bit error count (BEC) of a codeword saved on the memory region and saving statistical information corresponding to the BEC of the codeword to a histogram statistics log. In some embodiments, when the BEC of the codeword is greater than a BEC threshold, a refresh operation is scheduled for the memory region and/or logged. In these and other embodiments, when one or more error recovery error correction code (ECC) operations do not correct bit errors in the codeword, a refresh and/or retirement operation is schedule for the memory region and/or is logged.

Memory sub-system with background scan and histogram statistics

Several embodiments of systems incorporating memory devices are disclosed herein. In one embodiment, a memory device can include a controller and a memory component operably coupled to the controller. The controller can include a memory manager, a quality metrics first in first out (FIFO) circuit, and an error correction code (ECC) decoder. In some embodiments, the ECC decoder can generate quality metrics relating to one or more codewords saved in the memory component and read into the controller. In these and other embodiments, the ECC decoder can stream the quality metrics to the quality metrics FIFO circuit, and the quality metrics FIFO circuit can stream the quality metrics to the memory manager. In some embodiments, the memory manager can save all or a subset of the quality metrics in the memory component and/or can use the quality metrics in post-processing, such as in error avoidance operations of the memory device.

Memory sub-system codeword quality metrics streaming

A memory system is disclosed, including a memory component and a processing device configured to decode one or more codewords saved to a memory region of the memory component, detect that a number of bit errors corresponding to the decoding of the codeword exceeds a correction capability of the processing device, and execute an error recovery routine to reduce the number of detected bit errors to within the correction capability. The error recovery routine can include error recovery operations that are sequentially executed either until the number of bit errors is successfully reduced to within the correction capability or until a set of the error recovery operations has been executed. The error recovery operations can be ordered according to one or more factors, including energy used to execute a respective error recovery operation, a duration of the respective operation, and/or a likelihood of success of the respective operation.

Memory components with ordered sweep error recovery

A measure associated with a characteristic of a die of a memory device is obtained. It is determined whether the measure satisfies a first criterion to group one or more die into a first die family. If it is determined that the measure satisfies the first criterion, the die is associated with the first die family.

A system includes a memory circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

A total read counter, a plurality of die read counters, and a plurality of block read counters are maintained. Each die read counter is associated with a respective die of a memory device. A value of a block read counter and a value of a die read counter are determined for a specified block. Based on the value of the block read counter, the value of the die read counter, and the value of the total read counter, an estimated number of read events associated with the specified block of the memory device is determined. Responsive to determining that the estimated number of read events satisfies a predefined criterion, a media management operation of one or more pages associated with the specified block is performed.

Growing community of inventors

Longmont, CO, United States of America

Gerald L Cadloni