Intel Corporation

Novellus Systems Incorporated

Gerald B Feldewerth

Steven T Mayer

Jonathan David Reid

Jon Henri

Seshasayee Varadarajan

Kevin J Lee

John P Barnak

Ming Fang

Timothy Mark Archer

Seshu V Sattiraju

Tzuen-Luh Huang

Margherita Chang

Harry Y Liang

Andrew W H Yeoh

Thomas Tan Vu

David Sauer

Anita Kang

Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

Under bump metallization layer to enable use of high tin content solder bumps

An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.

Anode and anode chamber for copper electroplating

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Beaverton, OR, United States of America

Gerald B Feldewerth