Novellus Systems Incorporated

Lam Research Corporation

Onto Innovation Inc.

Intel Corporation

Nanometrics Inc.

Rudolph Technologies, Inc.

George Andrew Antonelli

Bart Jan Van Schravendijk

Mandyam Sriram

Jennifer O'Loughlin

Vishwanathan Rangarajan

Pramod Subramonium

Ananda K Banerji

Artur Kolics

Bhadri N Varadarajan

Seshasayee Varadarajan

Sirish K Reddy

Keith Fox

Dong Niu

Adrien Lavoie

Dennis Michael Hausmann

Jeffrey S Marks

Richard Alan Gottscho

Patrick G Breiling

John B Alexy

Thomas Joseph Knisley

Jason Dirk Haverkamp

Troy Daniel Ribaudo

Joe Womack

Bryan L Buckalew

Patrick A Van Cleemput

Nerissa Sue Draeger

Andrew John McKerrow

Jennifer Leigh Petraglia

Tighe A Spurlin

Robin Mair

Manjusha Mehendale

Derek Wong

Joseph Lindsey Womack

Nicholas James Keller

Tony Xavier

Jonathan David Reid

Deenesh Padhi

Girish Anant Dixit

Michael D Goodner

David W Porter

Hui-Jung Wu

Kaihan Abidi Ashtiani

Jengyi Yu

Krishna Nittala

James Forest Lee

Curtis Warren Bailey

Eugene Smargiassi

Kevin M McLaughlin

Michael Kotelyanskii

Christopher J Morath

Guray Tas

Stephen Lau

Nigel P Smith

Bart K Van Schravendijk

Priya Mukundhan

Alexander R Fox

Alice Hollister

Natalia V Doubina

Sean P Leary

Nicholas Muga Ndiege

James E Duncan

Lie Zhao

Gengwei Jiang

Casey Holder

Xiaolan Chen

Guenadiy Lazarov

Michael J Hammond

Andre D Miller

Jamie I Ludke

Francis C Vozzo

Darcy E Lambert

Durgalakshmi Singhal

Jennifer O'Ioughlin

Tong Zheng

Jennifer O`Loughlin

Jamie L Ludke

An alignment or overlay target that has an optically opaque layer disposed between the top and bottom target structure is measured using opto-acoustic metrology. A classifier library is generated for classifying whether an opto-acoustic metrology signal is on or off the bottom structure. A target may be measured by acquiring opto-acoustic measurement data for the bottom structure of the target and determining a location of the bottom structure using opto-acoustic metrology data acquired from the different locations over the bottom structure and the classifier library. Locations for acquisition of the data may be based on classification results of each measurement and a search pattern. The top structure of the target may be optically imaged. The relative position of the top structure with respect to the bottom structure is determined using the opto-acoustically determined location of the bottom structure and the image of the top structure.

System and method for performing alignment and overlay measurement through an opaque layer

A method of depositing a film stack including films of different compositions in a process station using a plasma is described. The method includes: in a first plasma-activated film deposition phase, depositing a first film having a first film composition on a substrate, and, in a second plasma-activated deposition phase, depositing a second film having a second film composition on the first film, where the second film composition is different from the first film composition. Deposition of the first film can include delivering at least two first deposition phase reactants to the process station via a delivery line; and deposition of the second film can include delivering at least two second deposition phase reactants to the process station via the same delivery line that was used during deposition of the first film. The method may also include a step of purging the delivery line.

Plasma-enhanced deposition of film stacks

An optical metrology device performs multi-wavelength polarized confocal Raman spectroscopy. The optical metrology device uses a first light source to produce a first light beam with a first wavelength and a second light source to produce a second light beam with a second wavelength. A dichroic beam splitter partially reflects the first light beam and transmits the second light beam to combine the light beams along a same optical axis that is incident on a sample. The dichroic beam splitter directs the Raman response emitted from the sample in response to the first light beam and the second light beam together towards at least one spectrometer and directs the first light beam away from the at least one spectrometer. A chopper may be used to isolate the Raman response to the first and second light beams that is received and spectrally measured by the at least one spectrometer.

Apparatus and method for multiple source excitation Raman spectroscopy

A metrology target is designed for measuring a feature at the bottom of a trench in a device under test, such as a tungsten recess vertical profile in a wordline in a three-dimensional (3D) NAND. The metrology target follows the design rules for the device under test and includes a tier stack with a plurality of tier stack pairs including, each including a conductor layer, such as tungsten, and an insulator layer, such as silicon dioxide and a trench that extends through the tier stack pairs. The metrology target includes a via that extends through the tier stack pairs and is positioned a lateral distance to the trench to promote access of light to a bottom of the trench, via plasmonic resonance, for measurement of a characteristic of the trench, such as the tungsten recess at the bottom of the wordline slit.

Target for optical measurement of trenches

A non-destructive opto-acoustic metrology device detects the presence and location of non-uniformities in a film stack that includes a large number, e.g., 50 or more, transparent layers. A transducer layer at the bottom of the film stack produces an acoustic wave in response to an excitation beam. A probe beam is reflected from the layer interfaces of the film stack and the acoustic wave to produce an interference signal that encodes data in a time domain from destructive and constructive interference as the acoustic wave propagates upward in the film stack. The data may be analyzed across the time domain to determine the presence and location of one or more non-uniformities in the film stack. An acoustic metrology target may be produced with a transducer layer configured to generate an acoustic wave with a desired acoustic profile based on characteristics of the film stack.

Opto-acoustic measurement of a transparent film stack

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Vacuum-integrated hardmask processes and apparatus

A metrology device that can determine at least one characteristics of a sample is disclosed. The metrology device includes an optical system that uses spatially coherent light with a first and a second objective lens as well as a detector that detects light reflected from the sample. The objective lenses use numerical apertures sufficient to produce a small probe size, e.g., less than 200 &#x3bc;m, while a spatial filter is used to reduce the effective numerical aperture of the optical system as seen by the detector to avoid loss of information and demanding computation requirements caused by the large angular spread due to large numerical apertures. The spatial filter permits light to pass in a desired range of angles, while blocking the remaining light and is positioned to prevent use of the full spatial extent of at least one of the first objective lens and the second objective lens.

Optical metrology device using numerical aperture reduction

An optical metrology device produces beams of light with varying wavelengths in a spectral range for measurement of a sample that is at least partially transparent to the spectral range. The light is obliquely incident on the sample, where a portion of the light is reflected off the top surface and a portion is transmitted through the sample and is reflected off the bottom surface. The incident light and/or reflected light is polarized and a phase modulator, such as a photoelastic modulator or electrooptic modulator, is adjusted based on the wavelengths in each beam of light to produce a same retardation of polarization for each beam of light. The reflected light that is received by a detector does not include light reflected from the bottom surface of the sample. A characteristic of a buried structure below the top surface of the sample is determined using the detected reflected light.

Optical metrology system using infrared wavelengths

An optical metrology device produces light in a spectral range for measurement of a sample using a tunable Quantum Cascade Laser (QCL). The optical metrology device includes a second channel that is used to diagnose when the tunable QCL is in failure mode, e.g., when it is not producing all wavelengths in the plurality of different wavelength ranges. The second channel includes at least one optical flat that is transmissive to the light produced by the QCL and is separate from the tunable QCL. The optical flat is switchably placed in a beam path of the light produced by the tunable QCL and light transmitted through the optical flat is received by a detector. Using output signals from the detector, a failure mode of the tunable QCL may be determined.

Light source failure identification in an optical metrology device

A white light interferometric metrology device operates in the image plane and objective pupil plane. The interferometric metrology device extracts the electric field with complex parameters and that is a function of azimuth angle, angle of incidence and wavelength from interferometric data obtained from the pupil plane. Characteristics of the sample are determined using the electric field based on an electric field model of the azimuth angle, the angle of incidence and the wavelength that is specific for a zero diffraction order. A center of the pupil in the pupil plane may be determined based on a Fourier transform of the interferometric data at each new measurement and used to convert each pixel from the camera imaging the objective pupil plane into a unique set of angle of incidence and azimuth angle of light incident on the sample.

Scanning white-light interferometry system for characterization of patterned semiconductor features

Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Clean resistant windows for ultraviolet thermal processing

An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

PECVD apparatus for in-situ deposition of film stacks

Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

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Portland, OR, United States of America

George Andrew Antonelli