Siltronic Ag

Peter Wolters Gmbh

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Georg Pietsch

Michael Kerstan

Heiko Aus Dem Spring

Juergen Schwandner

Thomas Buschhardt

Ernst Feuchtinger

Anton Huber

Diego Feijoo

Guenter Schwab

Roland Koppert

Alexander Rieger

Bernd Sauter

Frank Runkel

Conrad Von Bechtolsheim

Helge Moeller

Werner Blaha

Katharina Weindl

A multiplicity of slices are simultaneously sliced from a workpiece during a slicing operation using a wire saw. A non-linear pitch function dTAR(WP) is selected dependent on a target thickness value function TTAR(WP), a pitch function dINI(WP) and a thickness value function TINI(WP), dTAR(WP) and adjacent grooves in the wire guide rollers are assigned a pitch at a position WP during the slicing operation, TINI(WP) slices which are obtained during a plurality of preceding slicing operations by means of the wire saw at the position WP are assigned a thickness value, dINI(WP), adjacent grooves in the wire guide rollers at the position WP are assigned a pitch during the preceding slicing operations, TTAR(WP) slices which are sliced off during the slicing operation at the position WP are assigned a target thickness value, WP denoting the axial position of the adjacent grooves with respect to the axes of the wire guide rollers.

Method and apparatus for simultaneously slicing a multiplicity of slices from a workpiece

A multiplicity of wafers are simultaneously cut from an ingot using a structured sawing wire having indentations and protrusions along its length, wherein the structured sawing wire is guided through grooves of two wire guide rolls, and a bottom of each groove, on which the structured wire bears, has a curved groove bottom with a radius of curvature which, for each groove, is equal to or up to 1.5 times as large as the radius of the envelope of the structured wire which the structured wire has in the respective groove.

Wire saw, wire guide roll and method for simultaneously cutting a multiplicity of wafers from an ingot

A method for simultaneously cutting a multiplicity of slices from a cylindrical workpiece, along strictly convex cutting faces, by supplying a suspension of hard substances in a carrier liquid, as cutting medium, to wire portions, while the wire portions, having a longitudinal tension, define a relative motion to the workpiece as a result of wire guide roller rotation with continual alternation between a first direction of rotation and a second direction of rotation, which is opposite to the first direction of rotation, wherein, during the rotation in the first direction, the wire is moved a first length, and during the rotation in the second direction, the wire is moved a second length, and the second length is shorter than the first, and at the cutting operation start a first longitudinal wire tension is greater than a second longitudinal tension at the end.

Method for simultaneously cutting a multiplicity of slices of particularly uniform thickness from a workpiece

Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers.

Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers

A method and apparatus are used to simultaneously slice a multiplicity of slices from a workpiece. The workpiece is held with a feed device so as to position an axis of the workpiece parallel to axes of wire guide rolls of a wire saw and is moved from above through a web of the wire saw. A slurry is supplied as abrasive to wire sections of the web while the wire sections are moved relative to the workpiece. The relative movement guides the wire sections from an entry side to an exit side through the workpiece. A coolant is sprayed from the side and below through nozzles into slicing gaps in the workpiece. The nozzles are arranged below the web parallel to the axes of the wire guide rolls. The coolant is sprayed into the slicing gaps through a nozzle situated opposite the entry side of the respective wire section.

Apparatus and method for simultaneously slicing a multiplicity of slices from a workpiece

A method for simultaneously cutting a multiplicity of wafers from a cylindrical workpiece having an axis and a notch applied parallel to the axis in a lateral surface of the workpiece includes applying a cut-in beam on the workpiece where the cut-in beam has a head end and a foot end. The head end is inserted into the notch of the workpiece. The workpiece is held with a feed device so as to position an axis of the work piece parallel to the axes of cylindrical wire guide rollers of a wire saw. The cut-in beam is moved through a planar wire web, where the planar wire web has sections of wire arranged parallel to one another and perpendicular to the axes of the wire guide roller. The wire sections are moved the longitudinal wire direction in the presence of abrasives.

Method for simultaneously cutting a multiplicity of wafers from a workpiece

A multiplicity of wafer-type workpieces are buffer stored in a device having,

Device and method for buffer-storing a multiplicity of wafer-type workpieces

A trimming apparatus for trimming two working layers, including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpieces includes a trimming disk, a plurality of trimming bodies and an outer toothing, where the trimming bodies are configured to release abrasive substances upon contract with the working layers so as to effect material removal from the working layers. At least 80% of the area of the trimming bodies configured to come into contact with the working layers is arranged within a ring-shaped region on the trimming disk. The width of the ring-shaped region is between 1-25% of the diameter of the trimming disk and the area of the trimming bodies which comes into contact with the working layers occupies 20-90% of the total area of the ring-shaped region.

Method and apparatus for trimming the working layers of a double-side grinding apparatus

A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing at least one trimming apparatus including a trimming disk, a plurality of trimming bodies and an outer toothing. The upper and lower working disks are rotated. The trimming apparatus is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. The working layers and the trimming body are brought into contact so as to release abrasive substances from the trimming bodies and so as to effect material removal from the working layers. The direction of the drives of the grinding apparatus is changed at least twice during trimming.

Method for trimming the working layers of a double-side grinding apparatus

An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4.

Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers

A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers.

A method for simultaneous double-side material-removing processing of at least three workpieces includes disposing the workpieces in a working gap between rotating upper and lower working disks of a double-side processing apparatus. The workpieces lie in freely movable fashion in respective openings in a guide cage and are moved under pressure in the working gap using the guide cage. Upon attaining a preselected target thickness of the workpieces, a deceleration process is initiated that includes reducing an angular velocity &#x3c9;i(t) of a respective drive i of each of the upper working disk, lower working disk and guide cage to a standstill. The reducing is carried out such that ratios of the angular velocities &#x3c9;(t) with respect to one another as a function of time t deviate by no more than 10% from initial ratios of the angular velocities &#x3c9;(t) corresponding to when the preselected target thickness was attained.

Method for the simultaneous double-side material-removing processing of at least three workpieces

A method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers includes providing a double-side processing apparatus including two rotating ring-shaped working disks and a rolling apparatus. The carriers are arranged in the double-side processing apparatus and the openings are disposed in the carriers so as to satisfy the inequality:&#xb7;sin(&#x3c0;/*)&#x2212;&#x2212;1&#x2266;1.2where N* denotes a ratio of the round angle and an angle at which adjacent carriers are inserted into the rolling apparatus with the greatest distance with respect to one another, r denotes a radius of each opening for receiving a respective semiconductor wafer, e denotes a radius of a pitch circle around a midpoint of the carrier on which the opening is arranged, and R denotes a radius of the pitch circle on which the carriers move between the working disks by means of the rolling apparatus.

Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers

A method provides a respective flat working layer on each of two working disks of a double-side processing apparatus including a ring-shaped upper working disk, a ring shaped lower working disk and a rolling apparatus that are rotatably mounted about an axis of symmetry of the double-side processing apparatus. The method includes applying a lower intermediate layer and upper intermediate layer on respective surfaces of the lower and upper working disks. Then, simultaneous leveling of both intermediate layers is performed by moving trimming apparatuses on cycloidal paths over the intermediate layers using the rolling apparatus and the respective outer toothing under pressure and with addition of a cooling lubricant, so as to provide a material removal from the intermediate layers. A lower working layer of uniform thickness is then applied to the lower intermediate layer and an upper working layer of uniform thickness is applied to the upper intermediate layer.

Method for providing a respective flat working layer on each of the two working disks of a double-side processing apparatus

A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 &#x3bc;m. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 &#x3bc;m, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 &#x3bc;m.

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Burghausen, Germany

Georg Pietsch