Sk Enpulse Co., Ltd.

GeonGon Lee

Sung Hoon Son

Hyung-Joo Lee

Inkyun Shin

Min Gyo Jeong

Seong Yoon Kim

Suk Young Choi

Taewan Kim

Suhyeon Kim

HaHyeon Cho

Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to −0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.

Blank mask and photomask using the same

The present disclosure relates to a blank mask including: a transparent substrate; and

A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface of the light shielding film has a first contact angle of 40° to 45° measured by using diiodo-methane as a first liquid contacting the surface of the light shielding film, is disclosed.

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8.  [Equation 1] In the Equation 1, the ervalue is an etching rate of the first light shielding layer measured by etching with argon gas. The ervalue is an etching rate of the second light shielding layer measured by etching with argon gas. In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.

Growing community of inventors

Seoul, South Korea

GeonGon Lee