Tokyo Electron Limited

Gentaro Goshi

Keisuke Egashira

Hiroki Ohno

Hiromi Kiyose

Takuro Masuzumi

Kento Tsukano

Hiroshi Marumoto

Yosuke Kawabuchi

Shotaro Kitayama

Takahisa Otsuka

Yoshihiro Kai

Takayuki Toshima

Takehiko Orii

Kazuyuki Mitsuoka

Gen You

Hiroshi Komiya

Kazuki Kosai

Satoshi Biwa

Shogo Fukui

Seiya Fujimoto

Satoru Tanaka

Kenji Sekiguchi

Masami Yamashita

Teruomi Minami

Itaru Kanno

Wallace Paul Printz

Hisashi Kawano

Satoshi Okamura

Derek Bassett

Hiroyuki Higashi

Toru Ihara

Wayne M Parent

Naohiko Hamamura

A substrate processing method includes: a pressure increasing process of increasing an internal pressure of a process container to a processing pressure by supplying a process fluid into the process container; and after the pressure increasing process, a circulating process of supplying the process fluid from a second discharge part into the process container and discharging the process fluid in the process container from a fluid discharge part, while maintaining the internal pressure at the processing pressure, wherein the pressure increasing process includes: a first pressure increasing stage of increasing the internal pressure to a switching pressure by supplying the process fluid from a first discharge part into the process container; and after the first pressure increasing stage, a second pressure increasing stage of increasing the internal pressure from the switching pressure to the processing pressure by supplying the process fluid from the second discharge part into the process container.

Substrate drying method and substrate drying apparatus

A substrate processing method includes removing a dissolved gas in a processing liquid; forming a liquid film of the processing liquid covering a surface of a substrate, by supplying, onto the surface of the substrate, the processing liquid from which the dissolved gas is removed; carrying the substrate having the liquid film formed thereon into a processing vessel; and drying the surface of the substrate by flowing a processing fluid into the processing vessel while maintaining an internal pressure of the processing vessel, in which the substrate having the liquid film formed thereon is accommodated, at a pressure allowing the processing fluid to be maintained in a supercritical state, to replace the processing liquid covering the surface of the substrate with the processing fluid, and, then, by vaporizing the processing fluid.

Substrate processing method and substrate processing system

A substrate processing apparatus includes a substrate holding unitconfigured to hold a substrate W; an outer nozzleconfigured to discharge a processing liquid toward a surface of the substrate from a position at an outside of an outer edge of the substrate held by the substrate holding unit such that at least a central portion of the surface of the substrate is covered with a liquid film of the discharged processing liquid; and an actuator() configured to change a height position or a discharge angle of the outer nozzle.

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

Substrate processing apparatus and control method thereof

A substrate processing apparatus includes a supercritical fluid producing apparatus including a pump configured to send out a processing fluid; a processing container configured to perform a supercritical fluid processing on a substrate with a processing fluid in a supercritical state sent from the supercritical fluid producing apparatus; and a controller configured to control at least the supercritical fluid producing apparatus. When a pressure increase is performed within the processing container by using the processing fluid, the controller determines a first supply rate at which the processing fluid is supplied to the processing container based on a target time during which the pressure increase is performed, an amount of the processing fluid required for the pressure increase and a density of the processing fluid. Further, the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the first supply rate.

A method of removing particles of a substrate processing apparatus includes a pressure increasing process, a circulating process, and a particle removing process. In the pressure increasing process, a pressure in a processing space is increased by supplying a cleaned fluid from a first supply line to the processing space in a state where a second on-off valve and a third on-off valve are closed. In the circulating process, a processing fluid is supplied from a second supply line to the processing space and discharged from a discharge line by opening the second on-off valve and the third on-off valve after the pressure increasing process. In the particle removing process, a flow of the cleaned fluid is generated against the pressure of the processing space in the second supply line by opening and closing the second on-off valve during the pressure increasing process.

Method of removing particles of substrate processing apparatus, and substrate processing apparatus

A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

Substrate processing method, recording medium and substrate processing apparatus

In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

Substrate processing method, recording medium and substrate processing system

Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

Substrate processing apparatus, substrate processing method, and storage medium

Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

Method of cleaning substrate processing apparatus and system of cleaning substrate processing apparatus

A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.

Substrate processing apparatus

Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.

Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.

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Kumamoto, Japan

Gentaro Goshi