Intel Corporation

Gauri Nabar

Charles Henry Wallace

Manish Chandhok

Florian Gstrein

Richard E Schenker

Paul Anton Nyhus

Eungnak Han

Nafees Kabir

Gurpreet Singh

Tayseer Mahdi

Nityan Labros Nair

Brandon Jay Holybee

Xuanxuan Chen

Described herein are IC devices include tight-pitched patterned metal layers, such as metal gratings, and processes for forming such patterned metal layers. The processes include subtractive metal patterning, where portions of a metal layer are etched and replaced with an insulator to form the metal grating. Masks for etching portions of the metal layer are generated using directed self-assembly (DSA). In some examples, multiple etching steps are performed, e.g., to generate metal lines at a first pitch, and to add additional lines at half of the first pitch. In some examples, additive metal patterning is performed in addition to subtractive metal patterning.

Directed self-assembly enabled subtractive metal patterning

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Hillsboro, OR, United States of America

Gauri Nabar