Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Gau-Ming Lu

Yeong-Rong Chang

Dian-Hau Chen

Ching-Tien Ma

Cho-Ching Chen

Feng-Ru Chang

Dowson Jang

Chen-Hsi Shih

Wen-Han Hung

A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 &#x212b; thick, and preferably at least 100 &#x212b; thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.

Method for plasma etching a wafer after backside grinding

A method of improving photoresist adhesion in a reworked device, including the following steps. A semiconductor structure having an upper exposed metal layer is provided. An ARC layer is formed over the upper exposed metal layer. The ARC layer having an upper surface. A first photoresist layer is formed upon the ARC layer. The first photoresist layer is removed by a rework process. The ARC layer upper surface is roughened to form a roughened ARC layer upper surface. A second photoresist layer is formed upon the roughened ARC layer upper surface whereby adhesion of the second photoresist layer to the ARC layer is improved.

Photoresist adhesion improvement on metal layer after photoresist rework by extra N2O treatment

A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least 80&deg; C. The wafer is then cooled in a room temperature air for a sufficient length of time until the temperature of the wafer reaches substantially room temperature. The wafer is then rinsed in a rinsing step that includes a quick dump rinse and a final rinse with deionized water that is maintained at a temperature not higher than room temperature without first exposing the wafer to a buffer solvent such as that required in a conventional wet dip method.

Wet dip method for photoresist and polymer stripping without buffer treatment step

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Taipei, Taiwan

Gau-Ming Lu