International Business Machines Corporation

Gary T Spinillo

Robert Lavin Wood

Wayne Martin Moreau

Kevin Michael Welsh

Christopher F Lyons

James Thomas Fahey

Leo L Linehan

Robert R Dichiara

Brian Wayne Herbst

Ratnam Sooriyakumaran

Randolph J Smith

Pamela E Jones

Judy B Dorn

Ratnasabapathy Sooriyakumaran

Margaret C Lawson

Stanley E Perreault

James Patrick Collins

Erik A Puttlitz

Kathleen M Cornett

William J Miller

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

A method is described for reducing linewidth variations in the patterning of photoresists having non-uniform film thickness, comprising overcoating the photoresist with sufficient thickness of a nonreactive coating composition having a refractive index which within .+-.15 percent of that of the refractive index of the photoreist composition; said overcoating being of sufficient thickness such that it will result in about a one wave length phase lag between the oblique rays and the normal incident rays reflecting back from the substrate, upon arriving back at the resist surface. The effective thickness of the overcoating is a function of the exposure wavelength and the size of the numerical aperture of the objective lens used for expose. The overcoating compositions capable of providing the so defined refractive indices ranges, are described. For example, a polyacrylic acid coating composition having a refractive index of 1.5 at a thickness of 2.0 .mu.m, provides a workable overcoating to reduce linewidth variations for a resist having a refractive index of 1.7 and a film thickness of 0.9-1.0 .mu.m.

Phase-averaging resist coating for reflectivity control

Method for patterning a photoresist material wherein an anti-reflective

A polyalkylmethacrylate co-polymer of polyhydroxystyrene has been found to be an ideal blending partner in a novolak photoresist composition. The preferred co-polymer is poly(p-hydroxystyrene)-co-(methyl methacrylate). The co-polymer is fully miscible with novolaks and has a high thermal stability (&gt;150.degree. C.).

Photoresist composition including polyalkylmethacrylate co-polymer of

An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-UV antireflection coatings and methods for use thereof

Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA). The blend should include at least 10% by weight of the co-polymer. In operation, hydrogen bonding between the hydroxystyrene sub-units and the methacrylate sub-units decreases the availability of sites for crosslinking, and this reduction in crosslinking sites makes the blend less susceptible to formation of polymer resist microbridges. The invention is practicable with a polymers having a wide range of molecular weights (2000-50000 daltons), and development can be achieved using the industry standard 2.38 wt % trimethylammonium hydroxide (TMAH) developer without any adverse impact on the photoresist.

Composition for eliminating microbridging in chemically amplified

An antireflective coating composition (ARC) for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-uv antireflection coatings and methods for use thereof

Positive photoresist compositions which comprise an alkali soluble resin material, a diazoquinone dissolution inhibitor which decompose on exposure to mid and near UV radiation, and a sulfonic acid ester of an imide or oxime which does not absorb such mid or near UV radiation. Resist images of high contrast are formed.

Positive working photoresist composition containing mid or near UV

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Wappingers Falls, NY, United States of America

Gary T Spinillo