Other

Structured Materials Inc.

Ambp Tech Corporation

Structured Materials Industries Inc.

Emcore Corporation

Diamond Materials Inc.

Gary S Tompa

James F Garvey

Alexander I Gurary

Stuart Gilmour MacDonald

Craig Royden Nelson

Richard A Stall

Robert L DeLeon

Oleg A Voronov

Eric F Rexer

An RF heating system for a substrate or substrates including a susceptor for supporting the substrate; one or more RF heating coils; and a platen disposed between the RF heating coil and the substrate. The platen is constructed of materials that become heated under RF energy, which will then radiate heat into the susceptor and the substrate. In this way the susceptor need not be constructed of materials that become heated under RF energy thus minimizing levitation. The platen provides a uniform temperature profile across the substrates, benefiting from a more diffused heat source. The RF heating system may also be utilized in CVD apparatus that deposits materials on a continuous tape or roll.

RF heater arrangement for substrate heating apparatus

Apparatus for supporting the heater filament of the reactor in Chemical Vapor Deposition (CVD) system. The apparatus includes a recess or aperture disposed in a filament support plate; an electrically isolated rod supporting at least one of the coils of the filament, and extends into the recess or aperture in the support plate. A thermally insulating sleeve surrounds the rod. The post and sleeve arrangement provide a controlled and adjustable amount of lateral and vertical movement to the rod and filament to prevent damage to the filament caused by thermal expansion while providing lateral and vertical support to the filament.

Filament support arrangement for substrate heating apparatus

The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements, molecules, or phases of matter may range from on the order of nanometers or less, to about one millimeter, depending upon the specific materials and process conditions that are chosen. The method and apparatus of the present invention further provides processes for preparing these compositions of matter as thin films or particles.

Multi-component substances and processes for preparation thereof

A new class of carbon materials and their synthesis. The new carbon materials are formed by high pressure and high temperature processing of fullerene based carbon powder. The new carbon materials are harder than graphite and can be harder than steel (what the starting fullerenes are single wall nanotubes) or almost as hard as diamond (when the starting fullerened arm C buckyballs). The physical attributes of the materials can also be controlled by the pressing and heating parameters. These new carbon materials are conductive like graphite and unlike diamond which is an insulator. The materials can be formed by powder metallurgy techniques into any shape (cylinders, balls, tubes, rods, cones, foils, fibers or others). The new materials can also be readily doped, converted to diamond, formed within a porous composite or converted to diamond within the porous composite.

Fullene based sintered carbon materials

Deposition of thin films or powders by reactive pulsed arc molecular beam deposition. To produce these films and powders, a reactive or non-reactive gas is pulsed between a pair of electrodes situated within a vacuum chamber. The gas can be either chemically inert, to produce pure cathode material films, or chemically reactive, to produce chemical compounds of the cathode material. A storage capacitor is discharged between the electrode pair during the gas pulse. The gas serves as a carrier to direct and transport the ablated material to a substrate which is placed inline with the gas pulse, on which a film or powder of the electrode material or a chemical compound of the electrode material is then coated.

Pulsed arc molecular beam deposition apparatus and methodology

A process for preparing a material in which a gas mixture is subjected to a a temperature of at least 1,000 degrees Celsius while its pressure increased to at least 1,000 Torr. The pressurized hot gas mixture, which contains inert gas and fullerene ions, is then quenched by decreasing its temperature to a temperature of less than 500 degrees Celsius in a period of less than about 1 millisecond, and by decreasing its pressure of to a pressure of less than about 1 Torr in a period of less than about 10 milliseconds.

Pulsed arc molecular beam process

A Metal Organic Chemical Vapor Deposition (MOCVD) system particularly suitable for use at low deposition pressures and high or low temperatures. The system includes a reactor chamber having a reactant gas distribution unit (showerhead) which may be height adjustable having a temperature control chamber, for controlling the temperature of the reactants, a chamber for providing a uniform flow of carrier gas and a gas distribution chamber which includes baffling which can preclude gas phase mixing of the reactants. The gas distribution unit also includes an integral plasma generating electrode system for providing plasma enhanced deposition with controlled distribution of reactants. Also located in the reactor chamber is a temperature control unit for heating and/or cooling the wafers and a non-levitating rotating wafer carrier.

Plasma enhanced chemical vapor deposition system

A process for depositing carbon nitride films on substrates or work pieces by means of plasma assisted energy controlled ion beam deposition. The process produces microscopically smooth, nearly stress free, insulating and transparent carbon nitride thin films at room (or elevated) temperature. In the process the substrate, tool or other component to be coated is placed in a vacuum chamber at room temperature and is acted upon by a source of negative carbon ions and a high flux plasma source of nitrogen radicals. The source of C.sup.- ions is hydrogen free and provides particle energies suitable for the production of films of high quality carbon nitride. The source of the nitrogen flux provides a high density of nitrogen radicals to interact with the C.sup.- ion beam and coat the substrate with carbon nitride. In a further embodiment of the process, which provides an even higher deposition rate, a source of N.sup.+ is added which provides charge neutralization and surface nitridation prior to deposition.

Method for producing carbon nitride films

An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

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Belle Mead, NJ, United States of America

Gary S Tompa