Mattson Technology, Inc

Concept Systems Design, Inc.

Gary Lee Evans

Kristian E Johnsgard

Robert D Mailho

Glenn A Pfefferkorn

Glenn Pfefferkorn

Mark J O'Hara

Alan Carbonaro

A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.

Systems and methods for epitaxial processing of a semiconductor substrate

A semiconductor chemical vapor deposition reactor includes a susceptor and a cover above the susceptor to reflect and radiate heat from the susceptor back onto the top surfaces of the wafers held on the susceptor, thereby minimizing temperature gradients on the wafers and reducing slip. The cover has an opening in the center through which process gases are injected, creating a Bernouli effect to draw the process gases between the cover and susceptor, where the process gases then deposit on the wafers secured thereon.

Structure and method for reducing slip in semiconductor wafers

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Pleasanton, CA, United States of America

Gary Lee Evans