Hitachi Global Storage Technologies Netherlands B.v.

Gary John Suzuki

Dennis R McKean

Cherngye Hwang

Kim Yang Lee

Patterning a surface, comprising at least one feature having silicon coupled to a substrate, is described herein. In one embodiment a method is described for patterning a surface which comprises at least one feature having silicon and at least one feature having carbon coupled to a substrate. The surface is coated with 3-(trimethoxysilyl)propyl methacrylate, and a photoresist is applied the 3-(trimethoxysilyl)propyl methacrylate coated surface. The photoresist is imaged and the surface is etched. The photoresist is then removed.

Patterning a surface comprising silicon and carbon

A method is presented for repairing damaged photomasks for electronic component fabrication processes, particularly for fabrication of the ABS of a disk drive slider. The method includes applying an overcoat of material having index of fraction which is close to the index of refraction of the photoresist material of the damaged photomask to produce a non-scattering boundary surface. The overcoat material preferably includes an overcoat base material which is a polymer having an index of refraction which is in the range of plus or minus 0.1 from the index of refraction of said photoresist material.

Method for repairing photoresist layer defects using index matching overcoat

A method for creating segmented resist islands for photolithography on single sliders is disclosed. The method includes ramping the temperature of a number of single sliders, to a temperature that is below a proper softbake temperature. The single sliders reside in a divider and the single sliders and walls of the divider have a layer of resist deposited on them. Coarse lithography is then performed to remove the resist from above portions of the walls of the divider; and the temperature of the single sliders, the resist and the divider is then ramped to a proper softbake temperature.

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San Jose, CA, United States of America

Gary John Suzuki