General Semiconductor, Inc.

Gary Horsman

Finbarr O'Donoghue

Paddy O'Shea

Eamonn Medley

Willem G Einthoven

Lawrence LaTerza

Jack Eng

Danny Garbis

A surface mountable multi-chip device is provided which includes first and second lead frames portions and at least two chips. The lead frame portions each include a header region and a lead region. Beneficially, the header regions of the first and second lead frame portions lie in a common plane, with at least one semiconductor chip being placed on each of the header regions. A conductive member link is placed on top of the two chips to electrically and mechanically interconnect the chips.

Surface mount multichip devices

A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p&minus;n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.

Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same

A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p-n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.

Low-voltage punch-through bi-directional transient-voltage suppression devices

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Woodstock, VT, United States of America

Gary Horsman