Anhui University

Hefei Visionox Technology Co., Ltd.

Hefei Keda Bio-technology Co. Ltd

Gang Wang

Zhixiang Huang

Yingsong Li

Xingang Ren

Rubo Xing

Ke Wang

Kaikun Niu

Xianliang Wu

Siliang Wang

Junfeng Li

Qingrong Ren

Shuang Cui

Dandan Sun

Zonggui Wang

Guoxing Sun

Yali Zhao

Jiayu Rao

Yong Peng

Qianliu Cheng

Shengyang Wei

Huping Ju

Wei Zhi

Yan Geng

Sungen Cao

Rui Guo

Xun Zhao

Haofeng Zhang

A photosensitive circuit structure and an optical device, where the photosensitive circuit structure includes a photosensitive unit, a signal amplification unit and a control unit; the photosensitive unit includes a photodiode and a reset transistor, the signal amplification unit includes an amplification transistor, and the control unit includes a control transistor; an input terminal, an output terminal and a control terminal of the reset transistor are electrically connected to a power supply terminal, a control terminal of the amplification transistor and a reset signal terminal, respectively; an input terminal and output terminal of the amplification transistor are electrically connected to the power supply terminal and an input terminal of the control transistor respectively, and a control terminal of the control transistor is connected to a signal control terminal.

Photosensitive circuit structure and optical device

An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

Ultra-wideband electromagnetic band gap (EBG) structure and circuit board

A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure

Growing community of inventors

Hefei, China

Gang Wang