Kabushiki Kaisha Toshiba

Other

Jsr Corporation

Toshiba Memory Corporation

Gaku Minamihaba

Hiroyuki Yano

Yukiteru Matsui

Dai Fukushima

Nobuyuki Kurashima

Yoshikuni Tateyama

Susumu Yamamoto

Masayuki Hattori

Atsushi Shigeta

Akifumi Gawase

Hajime Eda

Kyoichi Suguro

Katsuya Okumura

Tomonori Aoyama

Hitoshi Tamura

Tadashi Iijima

Hisataka Hayashi

Nobuo Kawahashi

Masayuki Motonari

Akira Iio

Hiromi Niiyama

Hisako Aoyama

Hisashi Kaneko

Tetsuo Matsuda

Hiroshi Toyoda

Masako Kodera

Kazuo Nishimoto

Hiroshi Tomita

Masatoshi Yoshikawa

Minoru Amano

Nobuo Hayasaka

Hirokazu Kato

Motoyuki Sato

Masayoshi Iwayama

Tomohisa Konno

Takeo Kubota

Kenro Nakamura

Hirotaka Shida

Akihiro Takemura

Kazuhito Uchikura

Satoko Seta

Michiaki Andou

Yano Hiroyuki

According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Planarization method and planarization apparatus

According to an embodiment, a method of manufacturing a semiconductor device includes forming a wiring groove on an insulating film; forming a barrier metal layer and a metal layer; polishing the metal layer by applying a first load on the metal layer; and subsequently polishing the metal layer while applying a second load larger than the first load on the metal layer and spraying a gas onto a polishing pad. The polishing pad is in contact with the metal layer. The barrier metal layer covers an upper surface of the insulating film and an inner surface of the wiring groove, and the metal layer fills an inside of the wiring groove and covers the barrier metal layer.

Manufacturing method of semiconductor device and polishing apparatus

According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

Method of manufacturing semiconductor device

A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

Polishing method and method for fabricating semiconductor device

According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

Semiconductor device and method of manufacturing the same

According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Method for chemical planarization and chemical planarization apparatus

There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, and a surfactant having a hydrophilic moiety.

Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device

According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40&#xb0; C. (inclusive) to 50&#xb0; C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5&#xb0; C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30&#xb0; C. or less, and the exit temperature is adjusted to be higher by 5&#xb0; C. or more than the entrance temperature.

Semiconductor device manufacturing method

According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device

A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

Manufacturing method of a semiconductor device

Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

Post-CMP treating liquid and manufacturing method of semiconductor device using the same

An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 &#x3bc;m on a surface. The maximum length of the resin particles is not more than 5 &#x3bc;m and is 2.5 to 25 times as large as the curvature radius.

Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device

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Yokohama, Japan

Gaku Minamihaba