Applied Materials, Inc.

Gabriela Alva

Nancy Fung

A system and method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.

Methods for etching structures with oxygen pulsing

A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.

Methods for etching structures and smoothing sidewalls

A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.

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Santa Clara, CA, United States of America

Gabriela Alva