Acm Research (shanghai) Inc.

Acm Research, Inc.

Fuping Chen

Hui Wang

Xi Wang

Xiaoyan Zhang

Jian Wang

Fufa Chen

Jun Wang

Xuejun Li

Zhaowei Jia

Yinuo Jin

Liangzhi Xie

Shena Jia

Wenjun Wang

Jun Wu

Hongchao Yang

Zhiyou Fang

Yingwei Dai

Chaowei Jiang

Danying Wang

Shu Qing Yang

Voha Nuch

Deyun Wang

Yang Liu

Xiaofeng Tao

Feng Liu

He Wang

Ting Yao

Guanzhong Lu

Zhenming Chu

Huaidong Zhang

Guangyu Xia

Haibo Hu

The present invention provides a substrate supporting apparatus having a spin chuck and a plurality of locating pins. The spin chuck configured to support and rotate a substrate has a supporting surface. The locating pins are disposed at the periphery of the supporting surface for limiting the substrate horizontal displacement. The supporting surface defines a first annular region. The first annular region is divided into a plurality of pin regions and a plurality of non-pin regions. The pin regions and the non-pin regions are arranged alternatively in a circumferential direction of the first annular region. Each of the pin regions is corresponding to one locating pin. A plurality of Bernoulli holes are set in the first annular region and is configured as an uneven structure in the first annular region so as to supply stronger gas flow in the pin regions than in the non-pin regions.

Substrate supporting apparatus

Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIOsolution accommodated in a DIObath; after the one or more substrates are processed in the DIObath, taking the one or more substrates out from the DIObath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIOand SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

Method and apparatus for removing particles or photoresist on substrates

A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device

A coater with automatic cleaning function and a coater automatic cleaning method. The coater () includes a coater chamber () capable of being filled up with cleaning solution, a substrate chuck () holding and positioning a substrate (), and at least one shroud () capable of moving up for preventing photoresist from splashing out of the coater chamber (), or moving down and immersing into the cleaning solution for cleaning. The coater () automatic cleaning method includes the following steps: turning off a liquid outlet valve (A,B,) of the coater (); filling up a coater chamber () with cleaning solution; after photoresist in the coater chamber () being dissolved into the cleaning solution, turning on the liquid outlet valve (A,B,) and draining the cleaning solution out of the coater chamber ().

Coater with automatic cleaning function and coater automatic cleaning method

A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (); using TEBO megasonic to clean the substrate surface (); and drying the substrate (). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.

Substrate cleaning method and apparatus

The invention provides an apparatus for cleaning semiconductor wafers. The apparatus includes at least one first tank, containing cleaning chemical, configured to implement batch cleaning process; one or more second tanks, containing cleaning liquid, configured to implement batch cleaning process; one or more single wafer cleaning modules, configured to implement single wafer cleaning and drying processes; a plurality of robots, configured to transfer one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules; and a controller, configured to control the plurality of robots to transfer the one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules.

Apparatus and method for cleaning semiconductor wafers

Related to is a method for cleaning an in-process wafer. The method includes causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

Methods and apparatus for cleaning semiconductor wafers

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

A method for cleaning semiconductor wafer includes putting at least one wafer on a cassette bracket in a first cleaning tank filled with chemical solution; after said wafers have been processed in the first cleaning tank, transferring the wafers from the first cleaning tank to a second cleaning tank with the wafers immersing in the chemical solution; and after said wafers have been processed in the second cleaning tank, taking the wafers out of the second cleaning tank.

Method and apparatus for cleaning semiconductor wafer

The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.

The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Method and apparatus for cleaning substrates

A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

System for cleaning semiconductor wafers

An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Embodiments of the invention further provide methods for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.

Methods and apparatus for cleaning flip chip assemblies

The present invention provides a substrate heat treatment apparatus for heat treating a substrate, including a bake plate, support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.

Substrate heat treatment apparatus

The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

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Shanghai, China

Fuping Chen