Acm Research (Shanghai) Inc.

Acm Research, Inc.

Fuping Chen

Hui Wang

Xi Wang

Xiaoyan Zhang

Jian Wang

Jun Wang

Fufa Chen

Xuejun Li

Zhaowei Jia

Yinuo Jin

Liangzhi Xie

Shena Jia

Wenjun Wang

Jun Wu

Deyun Wang

Zhiyou Fang

Hongchao Yang

Chaowei Jiang

Yingwei Dai

Danying Wang

Xiaofeng Tao

Shu Qing Yang

Voha Nuch

Guanzhong Lu

Zhenming Chu

Yang Liu

Feng Liu

He Wang

Ting Yao

Guangyu Xia

Haibo Hu

Zeran Li

Huaidong Zhang

Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; injecting a protective gas into the gap at a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate for the drying process; stopping rotating the wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping injecting the protective gas after the wafer is taken out. According to the present invention, adjusting the switching logic and flow rate of the protective gas can ensure that the front side of the wafer is not prone to adsorption of external impurities during a wafer backside cleaning process, thereby improving the wafer backside cleaning stability.

Wafer backside cleaning method

An apparatus for cleaning semiconductor wafers includes a plurality of load ports; at least one first tank, containing cleaning chemical, configured to implement batch cleaning process; one or more second tanks, containing cleaning liquid, configured to implement batch cleaning process; and one or more single wafer cleaning modules. The apparatus further includes: a first turnover device, configured to rotate the one or more wafers from horizontal plane to vertical plane so that the one or more wafers can be vertically transferred to the at least one first tank; and a second turnover device, configured to rotate the one or more wafers from vertical plane to horizontal plane so that the one or more wafers can be horizontally transferred to the one or more single wafer cleaning modules.

Apparatus and method for cleaning semiconductor wafers

The present invention provides a substrate supporting apparatus having a spin chuck and a plurality of locating pins. The spin chuck configured to support and rotate a substrate has a supporting surface. The locating pins are disposed at the periphery of the supporting surface for limiting the substrate horizontal displacement. The supporting surface defines a first annular region. The first annular region is divided into a plurality of pin regions and a plurality of non-pin regions. The pin regions and the non-pin regions are arranged alternatively in a circumferential direction of the first annular region. Each of the pin regions is corresponding to one locating pin. A plurality of Bernoulli holes are set in the first annular region and is configured as an uneven structure in the first annular region so as to supply stronger gas flow in the pin regions than in the non-pin regions.

Substrate supporting apparatus

Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIOsolution accommodated in a DIObath; after the one or more substrates are processed in the DIObath, taking the one or more substrates out from the DIObath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIOand SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

Method and apparatus for removing particles or photoresist on substrates

A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device

A coater with automatic cleaning function and a coater automatic cleaning method. The coater () includes a coater chamber () capable of being filled up with cleaning solution, a substrate chuck () holding and positioning a substrate (), and at least one shroud () capable of moving up for preventing photoresist from splashing out of the coater chamber (), or moving down and immersing into the cleaning solution for cleaning. The coater () automatic cleaning method includes the following steps: turning off a liquid outlet valve (A,B,) of the coater (); filling up a coater chamber () with cleaning solution; after photoresist in the coater chamber () being dissolved into the cleaning solution, turning on the liquid outlet valve (A,B,) and draining the cleaning solution out of the coater chamber ().

Coater with automatic cleaning function and coater automatic cleaning method

A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (); using TEBO megasonic to clean the substrate surface (); and drying the substrate (). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.

Substrate cleaning method and apparatus

The invention provides an apparatus for cleaning semiconductor wafers. The apparatus includes at least one first tank, containing cleaning chemical, configured to implement batch cleaning process; one or more second tanks, containing cleaning liquid, configured to implement batch cleaning process; one or more single wafer cleaning modules, configured to implement single wafer cleaning and drying processes; a plurality of robots, configured to transfer one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules; and a controller, configured to control the plurality of robots to transfer the one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules.

Related to is a method for cleaning an in-process wafer. The method includes causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

Methods and apparatus for cleaning semiconductor wafers

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

A method for cleaning semiconductor wafer includes putting at least one wafer on a cassette bracket in a first cleaning tank filled with chemical solution; after said wafers have been processed in the first cleaning tank, transferring the wafers from the first cleaning tank to a second cleaning tank with the wafers immersing in the chemical solution; and after said wafers have been processed in the second cleaning tank, taking the wafers out of the second cleaning tank.

Method and apparatus for cleaning semiconductor wafer

The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.

The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Method and apparatus for cleaning substrates

A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

System for cleaning semiconductor wafers

An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Embodiments of the invention further provide methods for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.

Growing community of inventors

Shanghai, China

Fuping Chen