Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Fumitoshi Kawase

Satoshi Shibata

Hisako Kamiyanagi

Emi Kanazaki

Junji Hirase

Yasushi Naito

Tatsuo Sugiyama

Tetsuyuki Okano

Emi Kanasaki

Protons are entered into a substrate to be analyzed at a proton incident angle larger than 0&#xb0; and smaller 90&#xb0;. Excited by the entered protons and emitted from the substrate to be analyzed, the characteristic X-ray is measured by an energy dispersive X-ray detector and the like. Impurity elements present in the substrate to be analyzed are identified based on the measured characteristic X-ray. The in-plane distribution in the substrate can be obtained by scanning the proton beam. The in-depth distribution can be obtained by entering protons at different proton incident angles. The elemental analysis method can be applied to semiconductor device manufacturing processes to analyze metal contamination or quantify a conductivity determining impurity element on an inline basis and with a high degree of accuracy.

Elemental analysis method and semiconductor device manufacturing method

In this invention, a wafer is placed and kept in the low-temperature region at the bottom of a temperature space that is in a state of radiation equilibrium and that is formed inside chamber by a heating unit. The substrate temperature is gradually raised to a temperature ranging from 750&#xb0; C. to 800&#xb0; C. Next, the wafer is placed and kept in the high-temperature region in the temperature space and the substrate temperature is raised to the thermal processing temperature. Then thermal processing is performed for a specified period of time. By doing this, it is possible to perform uniform thermal processing without depending on the state of the wafer (ratio of an area covered by silicon nitride film or polysilicon film).

Method for thermal processing with a RTP process using temperature spaces in radiation equilibrium

In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extension structure is previously obtained. This correspondence satisfies that the transistor has a given threshold voltage. After formation of the gate electrode and measurement of the size of the gate electrode, ion implantation conditions or heat treatment conditions for forming the drain extension structure are set based on the previously-obtained correspondence and the measured size of the gate electrode. Ion implantation or heat treatment for forming the drain extension structure is performed under the ion implantation conditions or heat treatment conditions that have been set.

Method for fabricating electronic device

A light irradiation heat treatment apparatus and method may use a plane-shaped light irradiation heating component, facing one surface of a workpiece supported in a furnace, to raise the temperature of the workpiece. The temperature of the workpiece is raised by setting an intensity distribution for light irradiated from the light irradiation heating component in accordance with the resistivity of the workpiece. Thereafter, the workpiece is irradiated with light having the set light intensity distribution to raise its temperature.

Light irradiation heat treatment method and light irradiation heat treatment apparatus

When the emissivity &#x3b5; on the reverse face of a substrateis measured during annealing processing for the substratefilms made from a material that varies the emissivity &#x3b5;, such as a first DPS filmused for forming a plugA, a second DPS filmused for forming a capacitor lower electrodeA and a third DPS filmused for forming a capacitor upper electrodeA, are formed on the top face of the substrateOn the other hand, no film made from a material that varies the emissivity &#x3b5;, such as a DPS film, is formed on the reverse face of the substrate

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Toyama, Japan

Fumitoshi Kawase