Ebara Corporation

Kabushiki Kaisha Toshiba

Toshiba Corporation

Fumio Kuriyama

Masaaki Kimura

Nobutoshi Saito

Kenichi Suzuki

Manabu Tsujimura

Yuji Araki

Akihisa Hongo

Hiroyuki Ueyama

Atsushi Chono

Rei Kiumi

Takeshi Murakami

Hiroaki Inoue

Masashi Shimoyama

Naoaki Ogure

Tsutomu Nakada

Kuniaki Horie

Hidenao Suzuki

Masahito Abe

Takashi Takemura

Katsuya Okumura

Norio Kimura

Mizuki Nagai

Hiroshi Sobukawa

Yasuhiko Endo

Junitsu Yamakawa

Yukio Murai

Hiroshi Yokota

Jumpei Fujikata

Akira Fukunaga

Masahiko Sekimoto

Yugang Guo

Shingo Yasuda

Yusuke Tamari

Tsuyoshi Tokuoka

Sachiko Takeda

Stephen Strausser

An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.

Electroplating method

There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

Electroplating method and electroplating apparatus for through-hole

A magnetic film plating apparatus employs a dip method that allows relatively good escape of bubbles and does not require a wide footprint and, even when a ferromagnetic material is used for an anode, can form a magnetic film on a substrate surface while minimizing the influence of the anode on the uniformity of magnetic anisotropy in the magnetic film. The magnetic film plating apparatus includes a plating tank for holding a plating solution, an anode vertically disposed in the plating tank at a position to be immersed in the plating solution, a substrate holder for holding a substrate W and positioning the substrate W opposite the anode, and a magnetic field generator, disposed outside the plating tank, for generating a magnetic field around the substrate W held by the substrate holder and positioned opposite the anode.

Plating apparatus and plating method for forming magnetic film

A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.

Plating apparatus and plating method

A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

Plating method and apparatus

A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

Plating apparatus

A plating apparatus and method bubbles generated at the plating surfaces easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved. The plating apparatus has a cassette table for loading a cassette in which a substrate having a plating surface is contained. An aligner for aligning the substrate, a rinser-dryer for rinsing and drying the substrate, and a plating unit for plating the substrate are also provided. The plating unit includes a plating vessel containing a plating solution, and a holder holds the substrate to immerse the substrate in the plating solution in the plating vessel. The plating surface is exposed to a nozzle which ejects the plating solution toward the plating surface.

Apparatus and method for plating a substrate

An anode holder is used to hold an anode in a plating tank. The anode holder includes a bar having a conductive portion connected to a power source, a conductive anode shaft attached to the bar, and an anode connected to the conductive anode shaft. The conductive anode shaft includes an external thread portion provided at an end of the conductive anode shaft, an O-ring, and a step portion provided between the O-ring and the external thread portion. The step portion has a diameter larger than a diameter of the external thread portion but smaller than a diameter of the O-ring. The anode includes an internal thread hole to which the external thread portion of the conductive anode shaft is screwed. The anode also includes a receiving portion for receiving the step portion of the conductive anode shaft in a state such that the O-ring of the conductive anode shaft is brought into contact with an inner surface of the receiving portion.

Anode holder

Electrolytic plating anode

Anode shaft

The plating apparatus has a plating section in which a plating process is performed and a control section for regulating the plating solution. The plating section includes a plating bath containing plating solution, an anode provided in the plating solution, and a plating object serving as a cathode placed in the plating solution opposite the anode. The control section includes a regulating tank for regulating the composition and/or concentration of the plating solution, and a replenishing tank for injecting solution into the plating solution in the regulating tank. The plating apparatus also includes a mechanism for circulating plating solution between the regulating tank in the control section and the plating bath in the plating section. The plating section is installed in a first room, while the control section is installed in a second room, which is separate from the first room Accordingly, contamination in the plating section is prevented.

The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn&#x2014;Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn&#x2014;Ag alloy film having a lower Ag content than that of an Sn&#x2014;Ag eutectic composition by plating and reflowing the plated alloy film.

Lead free bump and method of forming the same

A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.

Substrate plating apparatus

A high quality metallic deposit can be produced inside the micro-cavities formed on a surface of a substrate by the present invention. The method involves immersing the substrate in a liquid held in a processing chamber, evacuating the processing chamber so as to remove residual bubbles from the micro-cavities and to degas the liquid within the micro-cavities, and subjecting the liquid to boiling in at least those regions adjacent to the substrate.

Method and apparatus for plating a substrate

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Tokyo, Japan

Fumio Kuriyama