Tokyo Electron Limited

Fumihiro Kamimura

Hiroshi Tanaka

Teruomi Minami

Koukichi Hiroshiro

Kazuki Kosai

Takashi Yabuta

Ikuo Sunaka

Masatoshi Kasahara

Norihiro Ito

Nobuhiro Ogata

Kenji Sekiguchi

Takahisa Otsuka

Yosuke Kawabuchi

Hiroshi Komiya

Hiromi Hara

Kenji Yokomizo

Yasushi Fujii

Naoyuki Okamura

Shogo Mizota

Kazuhiro Teraoka

Takeshi Uno

A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes: a processing chamber in which a substrate is processed with a processing liquid; a nozzle having a discharge port from which the processing liquid is discharged, the discharge port being formed in a distal end portion of the nozzle; a nozzle bath including an accommodation chamber formed therein, wherein the distal end portion of the nozzle is accommodated in the accommodation chamber at a standby time at which the processing liquid is not supplied to the substrate; a circulation line configured to return the processing liquid, which is discharged from the nozzle to the nozzle bath, to the nozzle; and a first restraint part configured to restrain a gas from flowing between an outside of the nozzle bath and the processing liquid present inside the nozzle bath when the processing liquid discharged from the nozzle to the nozzle bath is circulated to the nozzle.

Substrate processing apparatus and substrate processing method

Provided is a substrate liquid processing apparatus that processes a substrate with a processing liquid. The substrate liquid processing apparatus includes: a processing liquid storage unit configured to store the processing liquid therein; a processing liquid heating unit configured to heat the processing liquid, a controller configured to control the processing liquid heating unit; a temperature sensor; and a concentration sensor connected to the controller. The controller is configured to: measure a concentration of the processing liquid with the concentration sensor, measure a temperature of the processing liquid with the temperature sensor, calculate a boiling point corresponding to the measured concentration of the processing liquid, and control the output of the processing liquid heating unit, based on the boiling point and the measured temperature of the processing liquid.

Substrate liquid processing apparatus and method, and computer-readable storage medium storing substrate liquid processing program

Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Substrate processing method, substrate processing apparatus, and computer-readable storage medium stored with substrate processing program

The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxomonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tankis filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tankis allowed to flow into an outer tank. Then, a hydrogen peroxide solution is supplied into the inner tankand the hydrogen peroxide solution is allowed to flow into the outer tankwhereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank. Simultaneously when the hydrogen peroxide solution flows into the outer tank, a return pumpis activated.

Chemical-liquid mixing method and chemical-liquid mixing apparatus

The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxornonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tankis filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tankis allowed to flow into an outer tank. Then, a hydrogen peroxide solution is supplied into the inner tankand the hydrogen peroxide solution is allowed to flow into the outer tankwhereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank. Simultaneously when the hydrogen peroxide solution flows into the outer tank, a return pumpis activated.

Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Substrate liquid processing apparatus, substrate liquid processing method, and storage medium having substrate liquid processing program stored therein

In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

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Tosu, Japan

Fumihiro Kamimura