Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Fumiaki Shigemitsu

Kinya Usuda

Toshiaki Shinozaki

Takashi Tsuchiya

Yoshihide Kato

Kei Kirita

Katsuya Okumura

Yuichiro Yamazaki

Motosuke Miyoshi

Kazuyoshi Sugihara

Makoto Sekine

Takayuki Sakai

Ichiro Mori

Shingo Kanamitsu

Takashi Hirano

Satoshi Masuda

Tatsuo Nomaki

A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.

Photomask repair method and apparatus

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Method and apparatus for forming resist pattern

Prior to etching by an etchant, a low concentration solution of cerium ammonium nitrate [(NH.sub.4).sub.2 Ce(NO.sub.5).sub.6 ] is caused to adhere onto an electron-beam resist pattern, thus to improve hydrophilic property of the resist pattern. As a result, a metal thin film is etched in conformity with the resist pattern. Thus, a fine pattern of the metal thin film is provided.

Method of forming pattern and apparatus for implementing the same

A method of forming a resist pattern on a substrate such as a mask substrate for use in manufacturing semiconductor devices or a semiconductor substrate at the intermediate step for manufacturing semiconductor devices includes the steps of baking a resist coated on the substrate at a temperature in its Tg region (glass transition temperature region) or higher temperature, and annealing the resist at a temperature within the Tg region.

Method of forming resist pattern

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Growing community of inventors

Yokohama, Japan

Fumiaki Shigemitsu