Fujitsu Corporation

Fujitsu Microelectronics Limited

Fukashi Harada

Shuzo Fujimura

Hikaru Kokura

Keisuke Shinagawa

Takahiro Ito

Toshihiro Wakabayashi

Tadashi Oshima

Tatsuro Kawabata

Toshiyuki Ishida

Kenji Nukui

Tetsuo Kondo

Shinji Fukuta

Jun-ichi Konno

A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130&#xb0; C.

Manufacturing method of electronic device with resist ashing

On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.

Manufacturing method of semiconductor device including an anisotropic etching step

Method for producing semiconductor integrated circuits and apparatus

Growing community of inventors

Kawasaki, Japan

Fukashi Harada