Taiwan Semiconductor Manufacturing Comp. Ltd.

Fu-ming Huang

Kei-Wei Chen

Liang-Guang Chen

Chi-Jen Liu

Li-Chieh Wu

Tang-Kuei Chang

Ji Cui

Wei-Wei Liang

Chun-Chieh Lin

Chun-Wei Hsu

Ting-Kui Chang

Kao-Feng Liao

Chi-Hsiang Shen

Peng-Chung Jangjian

Ting-Hsun Chang

Hung Yen

Hui-chi Huang

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.

Slurry composition and method for polishing and integrated circuit

A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Methods for chemical mechanical polishing and forming interconnect structure

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CHANGHUA COUNTY, Taiwan

Fu-ming Huang