Taiwan Semiconductor Manufacturing Comp. Ltd.

Fu-Ming Huang

Liang-Guang Chen

Chun-Chieh Lin

Han-Hsin Kuo

Chi-Ming Tsai

Ting-Kui Chang

Kei-Wei Chen

Ting-Hsun Chang

Ji Cui

Chung-Chi Ko

Chih Hung Chen

Neng-Jye Yang

Tang-Kuei Chang

Chi-Hsiang Shen

Wei-Wei Liang

Hung Yen

Chi-Jen Liu

Li-Chieh Wu

Hsin-Ying Ho

Kao-Feng Liao

He Hui Peng

Peng-Chung Jangjian

Chun-Wen Hsiao

Ji James Cui

Sheng-Chao Chuang

Michael Yen

Yee-Chia Yeo

Huicheng Chang

Liang-Yin Chen

Chia-Cheng Chen

Ming-Chung Liang

Shich-Chang Suen

Tsung Hsien Chang

He-Hui Peng

Hao-Jen Liao

A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Chemical mechanical planarization tool

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

Post-CMP cleaning and apparatus

A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

Chemical mechanical polishing apparatus including a multi-zone platen

A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure

A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

Methods for chemical mechanical polishing and forming interconnect structure

The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

Ion implant process for defect elimination in metal layer planarization

An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

Interconnect structure for semiconductor devices

A polisher head of a polishing apparatus includes a membrane and a first local pressure nodule and a second local pressure nodule physically contacting the membrane. The first local pressure nodule is configured to apply a first local force to the membrane and the second local pressure nodule is configured to apply a second local force to the membrane. The first local pressure nodule and the second local pressure nodule are independently controllable.

Chemical mechanical polishing apparatus and method

A method for cleaning a brush includes inducing a static charge on a surface of a first plate, wherein the first plate comprises at least one of silicon nitride (SiN) or silicon oxide (SiO), wherein a, b, x and y are integers. The method further includes rotating the brush in contact with the surface of the first plate.

Brush cleaning method

Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

Mechanisms for removing debris from polishing pad

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Shengang, Taiwan

Fu-Ming Huang