Siliconware Precision Industries Co., Ltd.

Fu-Di Tang

Chien-Ping Huang

Chun-Chi Ke

Chun-Yuan Li

Yueh-Ying Tsai

Pang-Chun Lin

Yung-Chih Lin

Ching-Chiuan Wei

Ming-Chun Laio

Chin-Yuan Hung

Chin-Teng Hsu

Holman Chen

Chang-Fu Chen

Cha-Yun Yin

Yuan-Chun Li

Guo-Kai Su

Yu-Wei Lin

Terry Tsai

Yu-Ting Ho

A method for fabricating a carrier-free semiconductor package includes: half-etching a metal carrier to form a plurality of recess grooves and a plurality of metal studs each serving in position as a solder pad or a die pad; filing each of the recess grooves with a first encapsulant; forming on the metal studs an antioxidant layer such as a silver plating layer or an organic solderable protection layer; and performing die-bonding, wire-bonding and molding processes respectively to form a second encapsulant encapsulating the chip. The recess grooves are filled with the first encapsulant to enhance the adhesion between the first encapsulant and the metal carrier, thereby solving the conventional problem of having a weak and pliable copper plate and avoiding transportation difficulty. The invention eliminates the use of costly metals as an etching resist layer to reduce fabrication cost, and further allows conductive traces to be flexibly disposed on the metal carrier to enhance electrical connection quality.

Method for fabricating carrier-free semiconductor package

Carrier-free semiconductor package and fabrication method

A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

Fabrication method of semiconductor package without chip carrier

A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Fabrication method of semiconductor package having electrical connecting structures

Semiconductor package without chip carrier and fabrication method thereof

A Quad Flat No-Lead (QFN) semiconductor package includes a die pad; I/O connections disposed at the periphery of the die pad; a chip mounted on the die pad; bonding wires; an encapsulant for encapsulating the die pad, the I/O connections, the chip and the bonding wires while exposing the bottom surfaces of the die pad and the I/O connections; a surface layer formed on the bottoms surfaces of the die pad and the I/O connections; a dielectric layer formed on the bottom surfaces of the encapsulant and the surface layer and having openings for exposing the surface layer. The surface layer has good bonding with the dielectric layer that helps to prevent solder material in a reflow process from permeating into the die pad and prevent solder extrusion on the interface of the I/O connections and the dielectric layer, thereby increasing product yield.

Method for fabricating quad flat non-leaded semiconductor package

Semiconductor package having electrical connecting structures and fabrication method thereof

Quad flat non-leaded semiconductor package

A semiconductor package with a support structure and a fabrication method thereof are provided. With a chip being electrically connected to electrical contacts formed on a carrier, a molding process is performed. A plurality of recessed portions formed on the carrier are filled with an encapsulant for encapsulating the chip during the molding process. After the carrier is removed, the part of the encapsulant filling the recessed portions forms outwardly protruded portions on a surface of the encapsulant, such that the semiconductor package can be attached to an external device via the protruded portions.

Semiconductor package with a support structure and fabrication method thereof

A semiconductor package without a chip carrier includes an insulating structure having an opening; an electroplated die pad provided in the opening; a chip attached to the electroplated die pad by a thermally conductive adhesive; a plurality of electrical contacts formed around the electroplated die pad, wherein at least one of the electrical contacts is provided on a top surface of the insulating structure, and the chip is electrically connected to the electrical contacts; and an encapsulant for encapsulating the chip, the insulating structure and the electrical contacts, wherein bottom surfaces of the insulating structure, the electroplated die pad and the electrical contacts, except the at least one electrical contact provided on the top surface of the insulating structure, are exposed from the encapsulant and are flush with a bottom surface of the encapsulant. A fabrication method of the semiconductor package is also provided.

A carrier-free semiconductor package and a fabrication method thereof are provided. The fabrication method includes the steps of: providing a carrier having a plurality of electrical contacts formed thereon; mounting at least one chip on the carrier; electrically connecting the chip to the electrical contacts via a plurality of bonding wires; forming a coating layer on each of the electrical contacts to encapsulate a bonded end of each of the bonding wires on the electrical contacts; performing a molding process to form an encapsulant for encapsulating the chip, the bonding wires and the electrical contacts; and removing the carrier, such that bottom surfaces of the electrical contacts are exposed from the encapsulant. This obtains a semiconductor package not having a carrier, and the coating layers can enhance adhesion between the electrical contacts and the encapsulant.

Carrier-free semiconductor package and fabrication method thereof

A wire-bonding method and a semiconductor package using the same are provided. The semiconductor package includes a carrier; a chip mounted on the carrier; a plurality of first wires and second wires alternatively arranged in a stagger manner, with a wire loop of each second wire being downwardly bent to form a deformed portion so as to provide a height different between the wire loops of each first wire and each second wire, wherein the first and second wires electrically connect the chip to the carrier; and an encapsulant for encapsulating the chip, the first wires, the second wires and a portion of the carrier. The height difference between the wire loops of each first wire and each second wire increases a pitch between adjacent first and second wires thereby preventing the wires from contact and short circuit with each other due to wire sweep during an encapsulation process.

Wire-bonding method and semiconductor package using the same

An encapsulated semiconductor device includes a lead frame formed with a flash-proof body. The flash-proof body includes a dam bar formed on atop surface of the lead frame and a tape adhered to a bottom surface of the lead frame, where the dam bar is attached to both the lead frame and the tape. The semiconductor device further includes an encapsulation body having a core-hollowed portion integrated with the lead frame, the core-hollowed portion being bordered by the dam bar and the tape so that a semiconductor chip and conductive elements are exposed in the encapsulation body. A lid can be adhered to the encapsulation body to air-tightly seal the semiconductor chip and encapsulation elements in the core-hollowed portion.

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Taichung, Taiwan

Fu-Di Tang