Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Fu Cheng Chen

Jian Lu

Xuan Jie Liu

Jin Cheng

De Kui Qi

Jue Lu

Lin Bo Shi

A packaging structure is provided. The packaging structure includes a plurality of first chips; and a molding layer between adjacent first chips. The molding layer covers a sidewall of the first chip and exposes a top surface of the first chip.

Packaging structure

A method for manufacturing the image sensor includes providing a substrate structure; forming a mask layer on the substrate structure, the mask layer having openings; depositing a metal grid material covering a surface of the mask layer and a bottom of the openings; and stripping the mask layer for removing a portion of the metal grid material on the top surface of the mask layer. The substrate structure includes: a substrate having a first surface; a plurality of pixels in the substrate; isolation structures around each of the plurality of pixels; and an anti-reflective coating on the first surface of the substrate. The openings include first openings exposing a portion of the first surface of the substrate structure above the isolation structures. A remaining portion of the metal grid material at the bottom of the openings forms metal grids.

Image sensor with metal grids and manufacturing method thereof

A semiconductor structure includes providing a substrate including a first surface and a second surface opposite to the first surface. The first surface is a functional surface. The method also includes forming a plastic seal layer on the first surface of the substrate, and performing a thinning-down process on the second surface of the substrate after forming the plastic seal layer. The plastic seal layer provides support for the substrate during the thinning-down process, and thus warping or cracking of the plastic seal layermay be avoided. In addition, the plastic seal layer can also be used as a material for packaging the substrate. Therefore, after the thinning-down process, the plastic seal layer does not need to be removed. As such, the fabrication process is simplified, and the production cost is reduced.

Semiconductor structures and fabrication methods thereof

A packaging structure and a method for fabricating the packaging structure are provided. The method includes providing a wafer. The wafer has a first surface and a second surface opposing to the first surface, and the wafer includes a plurality of first chip regions and a spacing region between adjacent first chip regions. The method also includes forming a first adhesive layer adhered to the second surface of the wafer, and forming an opening penetrating through the spacing region of the wafer and a plurality of first chips in the first chip regions on sides of the opening. Further, the method includes forming a molding layer in the opening. The molding layer covers a sidewall of the first chip and exposes a top surface of the first chip.

Packaging structure and fabrication method thereof

A wafer bonding method includes providing a first wafer including a first wafer surface, forming a first metal layer on the first wafer surface, and forming a first annular retaining wall structure including a first annular retaining wall and a second annular retaining wall surrounded by the first annular retaining wall. The first metal layer is formed between the first annular retaining wall and the second annular retaining wall. The method includes providing a second wafer including a second wafer surface, forming a second metal layer on the second wafer surface, and forming a second annular retaining wall structure including a third annular retaining wall and a fourth annular retaining wall surrounded by the third annular retaining wall. The second metal layer is formed between the third annular retaining wall and the fourth annular retaining wall. The method further includes bonding the first metal layer to the second metal layer.

Wafer bonding methods and wafer-bonded structures

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

Growing community of inventors

Shanghai, China

Fu Cheng Chen