Intel Corporation

Fu-Chang Lo

Florence Eschbach

Alexander Tregub

Paul A Zimmerman

Pei-yang Yan

James M Powers

Susan M Holl

Alexander (Alex) Tregub

A pellicle membrane is mounted between an outer frame and an inner frame. At least one of the frames is attached to the reticle without using conventional adhesives. The pellicle and reticle may be used in a lithography system. The pellicle allows radiation to pass through the pellicle to the reticle and may prevent particles from passing through the pellicle.

Mounting a pellicle to a frame

An embodiment of the present invention includes a technique to improve stability of a pellicle. The pellicle is pre-baked at a predetermined temperature substantially below a glass transition temperature. The pre-baked pellicle is purged with an inert gas. The purged pellicle is radiated by a radiation at a wavelength. In another embodiment, a chamber is sealed with a pellicle membrane which divides the chamber into first and second compartments. The chamber has an inflow opening in the first compartment and an outflow opening in the second compartment. A gas is injected into the inflow opening and penetrates the pellicle membrane to the outflow opening. In another embodiment, the chamber has first inflow and outflow openings and second inflow and outflow openings in the first and second compartments, respectively. A first gas is injected into the first inflow opening and a second gas into the second inflow opening. The first and second gases have a permeability difference. The first gas penetrates the pellicle membrane to the second outflow opening.

Radiation stability of polymer pellicles

Disclosed are pellicle compositions and methods of making such pellicle compositions. The pellicle compositions provided include highly fluorinated polymers as well as fluorinated polymer/PVDF co-polymers.

Process to optimize properties of polymer pellicles and resist for lithography applications

Attaching a pellicle frame to a reticle

A photolithography mask is disclosed. The mask comprises a pattern layer that is selectively formed on a substrate in a photomask pattern. Next, a multilayer stack is formed on the pattern layer and the substrate. The multilayer stack is comprised of a plurality of pairs of thin films. Finally, an absorptive layer is disposed in trenches formed within the multilayer stack. The absorptive layer is absorptive of an EUV illuminating radiation. Further, the trenches are located substantially over the borders between the pattern layer and the substrate.

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Palo Alto, CA, United States of America

Fu-Chang Lo