Robert Boschgmbh

Friedjof Heuck

Thomas Friedrich

Volkmar Senz

Robert Maul

Christoph Schelling

Mirko Hattass

Reinhard Neul

Peter Schmollngruber

Benjamin Schmidt

Rolf Scheben

Torsten Ohms

Heiko Stahl

Odd-Axel Pruetz

Mike Schwarz

Christian Hoeppner

Franziska Rohlfing

Stefan Pinter

Frank Schatz

Helmut Grutzeck

Andreas Krauss

Stefan Leidich

Tjalf Pirk

Lars Tebje

Frank Reichenbach

Arne Dannenberg

Frederik Ante

Kerrin Doessel

Jochen Tomaschko

Achim Trautmann

Daniel Pantel

Stefan Majoni

Markus Kuhnke

Christof Schwenk

Nicolas Schorr

Sebastien Loiseau

Ricardo Zamora

Ferenc Lukacs

Viktor Morosow

Tamas Dögei

Jullian Gonska

Andreas Prinzen

Marcus Pritschow

Stefan Krause

A MEMS element is provided. The MEMS element includes: a substrate; a first passivation layer arranged on the substrate; a metal layer arranged on the first passivation layer; a second passivation layer arranged on the metal layer and on the first passivation layer; and a punch element, an electrically conductive diffusion-blocking layer being arranged on the punch element and on the second passivation layer, a first bonding element being arranged on the punch element.

Bond structures on MEMS element and ASIC element

A method for producing a bonding pad for a micromechanical sensor element. The method includes: depositing a first metal layer onto a top face of the functional layer, and depositing a second metal layer onto the first metal layer, wherein only the first layer or only the second layer is formed in a border region extending around a bonding pad region; covering a protective layer over a top face of the second metal layer in the bonding pad region and over the first or second metal layer in an inner peripheral portion of the border region, which inner peripheral portion adjoins the bonding pad region; etching the first or second layer at least in an outer peripheral portion of the border region down to the top face of the functional layer; removing the protective layer; carrying out an etching process starting from the top face of the layered structure.

Method for producing a bonding pad for a micromechanical sensor element

A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.

Method for manufacturing a piezoelectric resonator

A method for producing a wafer connection between a first and a second wafer. The method includes providing a first and second material for forming a eutectic alloy, providing a first wafer having a receiving structure for a die structure, filling the receiving structure with the first material, providing a second wafer having a die structure, the second material being situated on the die structure, providing a stop structure on the first and/or second wafer, so that when the two wafers are joined, a defined stop is provided, heating the first and second material at least to the eutectic temperature of the eutectic alloy, joining the first and second wafer so that the die structure is at least partly introduced into the receiving structure, the stop structure, the receiving structure, the die structure.

Method for producing a wafer connection

In micromechanical pressure sensor device and a corresponding production method, the micromechanical pressure sensor device is provided with a first diaphragm; an adjacent first cavity; a first deformation detection device situated in and/or on the first diaphragm for detecting a deformation of the first diaphragm as a consequence of an applied external pressure change and as a consequence of an internal mechanical deformation of the pressure sensor device; a second diaphragm; an adjacent second cavity; and a second deformation detection device situated in and/or on the second diaphragm for detecting a deformation of the second diaphragm as a consequence of the internal mechanical deformation of the pressure sensor device, where the second diaphragm is developed in such a way that it is not deformable as a consequence of the external pressure change.

Micromechanical pressure sensor with two cavities and diaphragms and corresponding production method

A micromechanical device that includes a carrier substrate; a sensor device that is situated on the carrier substrate and spaced apart from a surface section of the carrier substrate with the aid of spring elements in such a way that the sensor device is oscillatable relative to the surface section; and at least one stopper element, situated on the sensor device and/or on the surface section of the carrier substrate, which limits a deflection of the sensor device in the direction of the surface section.

Micromechanical device and method for manufacturing a micromechanical device

A micromechanical pressure sensor, having&#x2014;a pressure sensor core including a sensor diaphragm and a cavity developed above the sensor diaphragm; and&#x2014;a pressure sensor frame; and&#x2014;a spring element for the mechanical connection of the pressure sensor core to the pressure sensor frame being developed in such a way that a mechanical robustness is maximized and a coupling of stress from the pressure sensor frame into the sensor pressure core is minimized.

Micromechanical pressure sensor

A micromechanical rate-of-rotation sensor includes a first Coriolis element. The micromechanical rate-of-rotation sensor further includes a first drive beam arranged along the first Coriolis element. The first drive beam is coupled via a first spring to the first Coriolis element. The micromechanical rate-of-rotation sensor further includes a first drive electrode carrier extending from the first drive beam in a direction opposite to the first Coriolis element. The first drive electrode carrier is configured to carry a multiplicity of first drive electrodes extending parallel to the first drive beam.

Micromechanical yaw rate sensor and method for operating same

A micromechanical yaw rate sensor includes a substrate and a rotationally oscillating mass having a rotationally oscillating mass bearing. The rotationally oscillating mass bearing includes a rocker bar, a rocker spring rod which resiliently connects the rocker bar to the substrate, and two support spring rods which resiliently connect, on opposite sides of the rocker spring rod, the rocker bar to the rotationally oscillating mass.

Micromechanical yaw rate sensor and method for the production thereof

A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack.

Method for producing a multi-layer electrode system

A particle sensor for detecting electrically conductive particles. The particle sensor includes a first electrode structure with at least one electrode and a second electrode structure with at least one electrode. The first electrode structure and the second electrode structure are situated on an electrically insulating base body. An electric potential difference is generatable between an electrode of the first electrode structure and an electrode of the second electrode structure. The base body includes a heating structure for heating the first electrode structure and the second electrode structure, the heating structure being at least partially enclosed by the base body. This makes it possible to protect the heating structure and also to reduce the voltage needed to burn off particles accumulated on the electrode structures. A method for manufacturing a particle sensor is also described.

Particle sensor and method for manufacturing a particle sensor

An assembly body for micromirror chips that partly encloses an internal cavity, the assembly body including at two sides oriented away from one another, at least one respective partial outer wall that is fashioned transparent for a specified spectrum, and the assembly body having at least one first outer opening on which a first micromirror chip can be attached, and a second outer opening on which a second micromirror chip can be attached, in such a way that a light beam passing through the first partial outer wall is capable of being deflected by the first micromirror chip onto the second micromirror chip, and is capable of being deflected by the second micromirror chip through the second partial outer wall. A mirror device and a production method for a mirror device are also described.

Assembly body for micromirror chips, mirror device and production method for a mirror device

A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

Method for producing a micromechanical component, and corresponding micromechanical component

For the targeted influencing of the internal pressure within a cavity between two elements of a component, a getter material or an outgassing material is situated in an additional cavity between the two elements. After the two elements are bonded to one another, the additional cavity is still to be joined via a connecting opening to the cavity. The getter material or the outgassing material is then activated so that gasses are bound in the additional cavity and in the connected cavity, or an outgassing takes place. Only when the sought internal pressure has established itself in the connected cavity is the connecting opening to the additional cavity closed. In this way, the getter material or the outgassing material is only used for establishing a defined internal pressure, but no longer has any influence on the internal pressure within the cavity during ongoing operation of the component.

Component including two semiconductor elements between which at least two hermetically tightly sealed cavities having different internal pressures are formed and method for manufacturing such a component

A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.

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Stuttgart, Germany

Friedjof Heuck