International Business Machines Corporation

Frederick M Pressman

Peter A Agostino

Adolph Herbst

Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: ##STR1##

Photosensitive reactive ion etch barrier

Reaction products of organosilane compounds and a novolac resin having phenolic groups are capable of generating either positive or negative tone patterns depending on the time and temperature of processing. Particular photosensitive materials contemplated have the following chemical formula: ##STR1##

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Norwalk, CT, United States of America

Frederick M Pressman