Intel Corporation

Frederick Chen

Wilman Tsai

Steve S Mak

Jeff N Farnsworth

Chaoyang Li

Jian Ma

Karmen Yung

Phil Freiberger

Marilyn Kamna

An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.

Advanced mask patterning with patterning layer

An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.

Photomask frame modification to eliminate process induced critical dimension control variation

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Cupertino, CA, United States of America

Frederick Chen