Texas Instruments Corporation

Fred Y Clark

Ping Jiang

David Gerald Farber

Robyn R Carlson

James D Krouse

Andrew L Vance

Methods are provided for delineating different layers and interfaces for inspection of a semiconductor wafer, wherein a sectioned portion of a wafer is subjected to a reactive ion etch process before inspection using a scanning electron microscope.

Methods for inspection sample preparation

An assembly and method for improved scanning electron microscope analysis of semiconductor devices include a structure including a first layer and a second layer, the second layer shrinking substantially when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV, and at least part of the surface of the structure coated with a material composed of Iridium, wherein the coating is of sufficient thickness to reduce shrinkage of the second layer to approximately a predetermined amount when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV.

Growing community of inventors

Rowlett, TX, United States of America

Fred Y Clark