Agere Systems Inc.

Agere Systems Guardian Corp.

Lucent Technologies Inc.

Fred Anthony Stevie

Erik Cho Houge

John Martin McIntosh

Catherine B Vartuli

Larry E Plew

Scott Jessen

Jeffrey Bruce Bindell

Isik C Kizilyalli

Terri Lynn Shofner

Brian Kempshall

Steven Barry Valle

Stephen M Schwarz

Dennis Earl Schrope

Richard J Dare

A system () for crystallography including a sample holder (), an electron source () for generating an electron beam, and a scanning actuator () for controlling the relative movement between the electron beam and the crystalline sample, the scanning actuator being controllable for directing the electron beam at a series of spaced apart points within the sample area. The system also includes an image processor () for generating crystallographic data based upon electron diffraction from the crystalline sample and for determining whether sufficient data have been acquired to characterize the sample area. The system further includes a controller () for controlling the scanning actuator to space the points apart such that acquired data is representative of a different grains within the crystalline sample. IN other embodiments, the invention includes one or more ion beams () for crystallography and a combination ion beam/electron beam ().

Crystallographic metrology and process control

A method and apparatus used to calibrate high-resolution electron microscopes where a single standard provides multiple samples, each having a different atomic structure, permits rapid accurate calibration of the entire range of magnifications. The different atomic structure dimensions possess known reference measurement data. The S/TEM is adjusted to focus onto the crystal lattice structure of each sample in a selected sequence. Measurements of these lattice spacings are compared to known dimensions. If S/TEM measurements do not agree with the lattice spacing dimensions, the S/TEM magnification is adjusted to reflect known dimensions. Typical standard exchange and associated processing steps are eliminated by the use of the single standard comprising of a plurality of samples.

Calibration standard for high resolution electron microscopy

A semiconductor manufacturing automation method for analyzing a patterned feature formed on a semiconductor layer is disclosed. At least one patterned feature is scanned to generate an amplitude modulated waveform signal of the line and neighboring space characteristics. Signal processing is automatically performed on this waveform by an in-line computational source to extract known patterned features based on the profile of the amplitude modulated waveform signal. The extracted waveform segments are subjected to known geometric shapes to determine if the waveform indicates a normal or abnormal patterned feature on a semiconductor layer.

Abnormal photoresist line/space profile detection through signal processing of metrology waveform

The present invention relates to a device for testing particles for composition and concentration. The device includes a particle counter, a collector screen, and a mass spectrometer. In one embodiment, the collector screen is positioned to receive particles received by the particle counter, and the mass spectrometer is positioned to receive counted particles retained on the collector screen.

Mass spectrometer particle counter

The present invention provides a method of forming a dynamic template with a focused beam. The method includes forming a desired template that represents a desired image, forming an actual template that represents an actual image, such as a photolithographic mask or a semiconductor device feature, and comparing the desired template to the actual template to yield a deviation template. In one embodiment the deviation template is formed by subtracting the actual template from the desired template.

Method of focused ion beam pattern transfer using a smart dynamic template

The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

Method of determining a crystallographic quality of a material located on a substrate

Method for fabricating a structure. According to an exemplary embodiment, a structure is made by forming a layer of removable material with a first surface spaced a part from a second surface. The first surface is formed along a first region from which the material is removable. The first surface is altered by removal of material from the layer. Removed material from the first surface is monitored to detect fluctuations in a variable of composition in the layer, and removal of material from the first surface is terminated when the composition of monitored material meets a predetermined criterion. In an alternate embodiment a variable characteristic is imparted to a layer of material as a function of layer thickness and an operation is performed on the layer resulting in removal of material. Samples of removed material are monitored for variation in the characteristic and the operation is modified when a variation conforms with a criterion.

Monitoring system for determining progress in a fabrication activity

A scanning probe microscope includes a sensor head adjacent a stage for holding a sample, a scanning actuator for positioning the sensor head relative to the sample, and a probe carried by the sensor head. The probe preferably includes a base connected to the sensor head, a shank extending from the base at an angle offset from perpendicular to the base, and a tip connected to a distal end of the shank for contacting the sample. The angle is preferably in a range of 5 to 20&deg;. The tip is preferably laterally offset from the base to permit viewing of the tip without interference from the shank and the base. Thus, the location of the probe tip relative to the sample may be more easily determined.

Probe for scanning probe microscopy and related methods

Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.

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Orlando, FL, United States of America

Fred Anthony Stevie