Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Soitec

Stmicroelectronics S.a.

Frédéric Mazen

Hubert Moriceau

Oleg Kononchuk

Didier Landru

Nadia Ben Mohamed

Shay Reboh

Frank Fournel

Sébastien Kerdiles

Marcel Broekaart

Perrine Batude

Pablo Acosta Alba

Sylvain Maitrejean

Christophe Morales

Jean-Michel Hartmann

Vincent Larrey

François Rieutord

Thierry Baron

Aurélie Tauzin

Maxime Argoud

Benoit Sklenard

Jérôme Dechamp

Damien Massy

Carole Braley

Frédéric Milesi

Thierry Salvetat

Marie-Noelle Semeria

Benoît Sklenard

Philippe Montmayeul

Marie-Noëlle Semeria

Pierre Noe

Séverin Rouchier

Jean-Daniel Penot

Florence Madeira

Guillaume Berre

Marianne Coig

Helen Grampeix

A method for preparing a thin layer comprises a weakening step for forming a weakened zone in a central portion of a donor substrate, the weakened zone not extending into a peripheral portion of the donor substrate; a step of joining the main face of the donor substrate to a receiver substrate to form an assembly to be split; and a step of separating the assembly to be split, the separating step comprising a heat treatment resulting in the freeing of the thin layer from the donor substrate at the central portion thereof only. The method also comprises, after the separating step, a detaching step comprising the treating of the assembly to be split in order to detach the peripheral portion of the donor substrate from the receiver substrate.

Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion

A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

Method for detecting the splitting of a substrate weakened by implanting atomic species

A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.

Method for layer transfer with localised reduction of a capacity to initiate a fracture

Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

Substrates including useful layers

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.

Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species

A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

Healing method before transfer of a semiconducting layer

A process for forming a predetermined separation zone inside a donor substrate, in particular, to be used in a process of transferring a layer onto a carrier substrate comprises an implantation step that is carried out such that the implantation dose in a zone of the edge of the donor substrate is lower than the implantation dose in a central zone of the donor substrate to limit the formation of particles during thermal annealing. The present disclosure also relates to a donor substrate for a process of transferring a thin layer onto a carrier substrate produced by means of the process described above. The present disclosure also relates to a device for limiting an implantation region to a zone of the edge of a donor substrate.

Masking a zone at the edge of a donor substrate during an ion implantation step

A method for detaching a self-supporting layer of silicon of crystalline orientation &#x3c;100&#x3e;, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation &#x3c;100&#x3e; so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30&#xb0; C./s so as to detach the self-supporting layer of silicon.

Detachment of a self-supporting layer of silicon &#x3c;100&#x3e;

This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.

System for measuring a spacing zone in a substrate

A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.

Method for preparing thin GaN layers by implantation and recycling of a starting substrate

A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being obtained by the ion implantation process to be characterized; a second step of measuring a parameter representative of an electrical conduction of the degraded PN junction and a dispersion of the parameter on a surface on which the degraded PN junction is produced, the parameter and the dispersion forming a reference parameter and a reference dispersion, the first and second steps being repeated in time so as to follow the evolution of the parameter representative of electrical conduction with relation to the reference parameter and the dispersion of the representative parameter with relation to the reference dispersion.

Ion implantation process characterization method

A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.

Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained

The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures.

Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material

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Grenoble, France

Frédéric Mazen