International Business Machines Corporation

Leland Stanford Junior University

Franklin M Schellenberg

Thomas H Baum

Robert Dennis Miller

Yutaka Takahashi

James M Zavislan

Phillip Joe Brock

Paul B Comita

Tadashi Fukuzawa

Victor Y Lee

Glenn T Sincerbox

Gary C Bjorklund

William P Risk, Iii

Wilfried Lenth

Kiyoshi Kumata

Satoru S Kano

Jiunn Tsay

Jean-Claude J Baumert

Rahul Asthana

Jacqlynn A Franklin

The present invention relates to a method for the repair of defects in the nonprinting region of a phase-shifting optical lithography mask by depositing an opaque material on the defect from a gaseous precursor by beam-induced deposition.

Method for the repair of defects in lithographic masks

A nonlinear optical device comprising a substrate and a film structure coated on to the substrate. The film has, in a direction normal to the substrate, an intercalation structure including a semiconductor layer and an organic layer that lave different energy gaps. The intercalation structure includes a plurality of semiconductor layers and a plurality of organic layers which comprise a quantum well system. The film structure includes an assembly of microcrystals having domain size smaller than that of the wavelength of light with which the device operates. The microcrystals have an axis aligned in a direction normal to the substrate and have randomly oriented axes in a direction parallel to the substrate. A method for producing the device comprises providing a solution of an organic material in a solvent and placing a quantity of the solution on a substrate to form the organic material film structure thereon. The film is formed by spin coating of the solution on the substrate. Preferably the film is comprised of a two-dimensional perovskite such as (C.sub.10 H.sub.21 NH.sub.3).sub.2 PbI.sub.4. The solvent is acetone or dimethoxyl ethane.

Nonlinear optical device and method of manufacturing same

A plurality of noncontiguous polygonal regions of phase-shifting material have edges spaced apart less than the distance at which images of said edges would separate. The edges of the regions of phase-shifting material have differing arbitrarily selectable angular orientations (nonparallel as well as parallel) on a nonphase-shifting material. The noncontiguous phase-shifting regions may be arranged in a matrix of parallel columns and rows to facilitate fabrication and facilitate writing of the phase-shifting regions in any arbitrary pattern on an image plane. At least one of the phase-shifting regions constitutes a connective phase-shifting region with edges spaced from edges of adjacent ones of the phase-shifting regions to create a pattern with a continuous body of photoresist covering areas corresponding to the phase-shifting regions upon exposure of the mask. The phase-shifting regions may have different transmission coefficients to provide differing degrees of transparency or different degrees of phase shift to provide differing degrees of image intensity.

Phase-shifting transparent lithographic mask for writing contiguous

A birefringent structure useful as a waveplate, grating, a hologram, a beam separator, a digital data storage medium or the like is formed by photo-exposure causing photo-reaction between photons and polymeric structures. In a specific embodiment, birefringence is induced by applying optical energy to a polymer film such as a polysilane with sufficient intensity to excite nonlinear absorption in the polymer film such that a pattern of the exposing optical energy is recorded in the polymer film. The optical energy is of a distinct polarization state such that the nonlinear optical ef

Birefringent structures formed by photo-exposure of polymer films and

A birefringent structure useful as a waveplate, grating, a hologram, a beam separator, a digital data storage medium or the like is formed by photo-exposure causing photo-reaction between photons and polymeric structures. In a specific embodiment, birefringence is induced by applying optical energy to a polymer film such as a polysilane with sufficient intensity to excite nonlinear absorption in the polymer film such that a pattern of the exposing optical energy is recorded in the polymer film. The optical energy is of a distinct polar

An improved apparatus and method for detecting the polarization state of an optical wavefront is disclosed, which is especially suitable for use in an integrated magneto-optic recording head. An optically transparent waveguide structure transmits TE and TM modes of the wavefront propagated as a beam coupled into the waveguide by a TE/TM grating coupler. In the waveguide structure is a periodic structure comprising a birefringent mode separator that splits the propagating beam into TE and TM modes. The mode separator comprises an array of uniformly spaced volumes of identical configuration. Photosensitive devices detect the intensity of the light contained within each of the separated beams. The signals from these photosensitive devices are used to determine the state of polarization of the optical wavefront. The periodic structure may, if desired, comprise regions of alternating birefringence, such as a Bragg grating, either in a waveguide layer or a cladding layer. Focal power is introduced (1) by providing focal power in the input grating coupler to the waveguide with a curved grating structure, (2) by varying the pitch of the birefringent mode separator extending in a direction transverse to the optical axis of the propagating beam, or (3) by introducing a surface grating with a varying pitch in a direction transverse of the optical axis.

Detecting polarization state of an optical wavefront

A process and apparatus are disclosed for producing a beam of coherent radiation at essentially 459 nm by mixing, in a nonlinear crystal consisting essentially of KTP, two laser beams, one at essentially 1064 nm and the other at essentially 808 nm. The 1064 nm radiation is derived from a Nd:YAG laser that consists of an input mirror, an output mirror and a Nd:YAG crystal, and contains also the KTP crystal. The Nd:YAG laser is pumped by an essentially 808 nm semiconductor diode laser beam, which passes through the input mirror and through the KTP crystal into the Nd:YAG laser crystal where it is absorbed. The 1064 nm radiation oscillating inside the Nd:YAG laser resonator is mixed either with the said 808 nm pump beam or with 808 nm radiation provided by a second semiconductor diode laser whose light is coupled with the 1064 nm beam using a beamsplitter. The essentially 459 nm beam passes through the output mirror to a utilization device.

Growing community of inventors

Cupertino, CA, United States of America

Franklin M Schellenberg