Aixtron Ag

Aixtron, Inc.

Frank Wischmeyer

Rune Berge

Johannes Käppeler

Johannes Kaeppeler

Johannes K&auml;ppeler

The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber () consisting of a number of wall elements (), said wall elements () being electroconductive and placed end-to-end, thus forming contacts (&#x2033;); a reactor housing () enclosing the wall elements () of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements () of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe () is implanted between the reactor housing () and the walls () of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls () of the treatment chamber.

CVD reactor with RF-heated process chamber

The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

CVD reactor with graphite-foam insulated, tubular susceptor

The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

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Aachen, Germany

Frank Wischmeyer