Disco Corporation

Frank Wei

Hiroshi Morikazu

Nao Hattori

Masatoshi Wakahara

Ye Chen

Masahiro Takekawa

Tatsuhiko Mori

Hirotaka Ochiai

A device chip manufacturing method includes attaching a wafer to the first surface of a semiconductor ingot, separating the semiconductor ingot into a subject part and a remaining part after attachment, the subject part being attached to the wafer to form a laminated wafer having a front side as an exposed surface of the subject part and a back side as an exposed surface of the wafer, setting a plurality of crossing division lines on the front side of the laminated wafer to thereby define a plurality of separate regions after separation, and next forming a plurality of devices in the respective separate regions, and then dividing the laminated wafer along the division lines after forming the devices, thereby forming the plural device chips including the respective devices.

Device chip manufacturing method

A method for manufacturing a wiring board that has a rewiring layer on a surface thereof includes forming an insulating layer on a core substrate, forming a groove, in which a wiring layer of a circuit pattern is to be provided, on the insulating layer, forming a metal seed layer on an exposed face of the insulating layer on which the groove is formed, electrodepositing metal, which is to form the wiring layer, by plating to fill the groove with the metal to form a metal layer on the seed layer, machining the metal layer by a cutting tool to remove the metal layer up to a position not reaching the top of the insulating layer, and performing etching or a CMP process to expose the top of the insulating layer thereby to form the wiring layer in the groove and flatten an exposed face of the wiring layer.

Manufacturing method for wiring board

A semiconductor wafer processing method includes a step of forming a laser processed groove on the front side of a semiconductor wafer along each division line, a step of forming a mask layer on a protective layer except in an area above a metal electrode formed in each device on the front side of the wafer, a first etching step of etching the protective layer by using the mask layer to expose each metal electrode, a second etching step of etching the inner surface of each laser processed groove by using the mask layer used in the first etching step, thereby expanding each laser processed groove, and a dividing step of dividing the wafer along each laser processed groove expanded in the second etching step.

Semiconductor wafer processing method

A processing system includes a processing apparatus having functional units including a holding unit that holds a workpiece by a holding surface, a processing unit that processes the workpiece held by the holding unit, and a feed unit that moves the holding unit and the processing unit relatively. The processing system further includes a detecting unit that is provided for part or all of the functional units and detects any of vibration, current, voltage, load, speed, torque, pressure, temperature, flow rate, change in a taken image, and the thickness of the workpiece, and a data accumulating unit that accumulates information included in a signal output from the detecting unit as data.

Processing system

A method for processing a workpiece including: a supporting plate preparing step of preparing a supporting plate having, on a top surface side of the supporting plate, a recessed portion configured to house a projecting portion provided in a device region of the workpiece; a positioning step of mounting the workpiece on the supporting plate such that the recessed portion of the supporting plate and the device region of the workpiece correspond to each other; a bonding step of forming a welded region in which the workpiece is welded to the supporting plate by irradiating a peripheral surplus region of the workpiece mounted on the supporting plate with a laser beam, whereby the workpiece is fixed on the supporting plate; and a processing step of processing the workpiece after performing the bonding step.

Workpiece processing method

A method of processing a plate-shaped workpiece includes: a positioning step of mounting the plate-shaped workpiece on a support plate; a joining step of irradiating an outer peripheral portion of the plate-shaped workpiece mounted on the support plate with a laser beam to form a fusion bond region where the plate-shaped workpiece is fusion-bonded to the support plate at the outer peripheral portion of the plate-shaped workpiece, thereby fixing the plate-shaped workpiece onto the support plate; and a processing step of processing the plate-shaped workpiece after the joining step.

Growing community of inventors

Tokyo, Japan

Frank Wei